Effect of Ga dissolution in Au of Ni–Au system on ohmic contact formation to p-type GaN

Yang, Jiin-Long; Chen, Jen‐Sue

doi:10.1016/j.jallcom.2005.09.075

Cited by 8 publications

(3 citation statements)

References 26 publications

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“…By properly optimizing the annealing conditions, the outdiffusion of Ga atoms from the p-GaN surface results in a decent number of Ga vacancies. Ga vacancies can well trap the electrons, and thus the holes are less compensated by the electrons, resulting in the accumulated hole concentration at the p-GaN surface [ 42 ]. The high hole concentration at the p-GaN surface can remarkably reduce the intraband tunneling region width and hence improve the hole tunneling efficiency.…”

Section: Increase the Hole Injection Efficiency From The P-type Ohmentioning

confidence: 99%

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Zhang

et al. 2017

Materials

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The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

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Section: Increase the Hole Injection Efficiency From The P-type Ohmentioning

confidence: 99%

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Zhang

et al. 2017

Materials

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“…Currently, the most commonly used Ohmic contacts are Ni/Au metallization annealed in ambient air at around 500 °C. The formation of a good Ohmic contact has been attributed to different factors, such as the formation of a NiO phase with an inversion of layers to form a p-GaN/Au/NiO stack and the formation of a gallide solid solution (Au/Ga phases), leading to the creation of Ga vacancies below the contact, thus increasing the hole concentration of p-GaN. − However, Au contacts are expensive, unstable at high temperature, and incompatible with the complementary metal oxide semiconductor (CMOS) technology . As a consequence, Au-free contacts are gaining more and more attraction.…”

Section: Introductionmentioning

confidence: 99%

Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN

Tlemçani

Mauduit

Bah

et al. 2023

ACS Appl. Mater. Interfaces

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The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contacts. However, Au metal contacts are quite expensive, are incompatible with the complementary metal oxide−semiconductor foundries, and also have poor thermal stability. Thus, seeking an alternative that is affordable and thermally stable is crucial. In the present study, we investigate Au-free Ohmic contact formation on p-type GaN using a bilayer Ni/Al-doped ZnO (AZO) thin film. Careful studies were focused on identifying the role of process parameters such as annealing parameters: temperature, time, and atmosphere in order to obtain an excellent Ohmic contact on p-GaN. Our results show that the contact resistance can be significantly reduced using a Ni/AZO bilayer with a suitable rapid thermal process. We demonstrate that the specific contact resistance for Ni/AZO on p-GaN can reach the lowest value of 1.85 × 10 −4 Ω•cm 2 for a sample with a 5 nm Ni layer annealed at 500 °C in air for 5 min. Our work demonstrates that the bilayer Ni/AZO contact could be suitable for efficient GaN power diodes or transistors.

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“…First, the oxidation of the nickel layer during the annealing leads to the inversion of Ni and Au layers, which induces a final p-GaN/Au/NiO stack [12]. The second explanation is the creation of gallium vacancies at the top of the p-GaN, caused by the formation of gallide solid solutions, increasing the free hole concentration at the contact interface [13][14][15]. In this work, we investigated the formation of ohmic contacts to p-GaN using the standard configuration, i.e.…”

Section: Introductionmentioning

confidence: 99%

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

Mauduit

Tlemçani

Zhang

et al. 2023

Microelectronic Engineering

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Effect of Ga dissolution in Au of Ni–Au system on ohmic contact formation to p-type GaN

Cited by 8 publications

References 26 publications

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

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