Abstract:The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contacts. However, Au metal contacts are quite expensive, are incompatible with the complementary metal oxide−semiconductor foundries, and also have poor thermal stability. Thus, seeking an alternative that is affordable and thermally stable is crucial. In the present study, we investigate Au-f… Show more
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