Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type Si. II. Optical Modes

Cerdeira, F.; Fjeldly, Tor A.; Cardona, M.

doi:10.1103/physrevb.8.4734

Cited by 461 publications

(329 citation statements)

References 13 publications

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“…3, we summarize the results of two studies in which q has been determined as a function of photon energy for a total of six different doping densities. 7,8 For photon energies away from the strong Raman-scattering resonance at ∼ 3.4 eV (associated with direct valence-band-toconduction-band transitions), 6,8,29 the data show the expected monatomic dependence of q on doping density: more heavily doped samples exhibit smaller q values, owing to stronger scattering by the continuum with increased doping.…”

Section: Coherent Phonons In Siliconmentioning

confidence: 91%

“…In p-type Si, the discrete excitation-the optic phonon-couples to the continuum of electronic excitations associated with intervalence-band transitions. Raman spectra obtained over a wide range of incident photon energies and doping levels are well fit by the Fano line shape, [6][7][8] and the line-shape parameters are quantitatively described by detailed theory. 10,11 Local phonon modes associated with the boron impurity in p-type Si also exhibit the Fano line shape.…”

Section: Introductionmentioning

confidence: 99%

“…Subsequent to Fano's paper, this asymmetric resonance has been observed in a wide variety of solid-state settings, including ultraviolet absorption by excitons in insulators, 2 infrared absorption by adsorbates on metal surfaces, [3][4][5] and Raman scattering of optical vibrations in semiconductors. [6][7][8] The Fano resonance is also a key element of the optics of plasmonic nanostructures and metamaterials. 9 Raman scattering in degenerate p-type Si exhibits one of the cleanest examples of a Fano system.…”

Section: Introductionmentioning

confidence: 99%

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Classical Fano oscillator

Riffe

2011

Phys. Rev. B

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Starting from the quantum-mechanical Fano-Anderson Hamiltonian, we derive classical equations of motion for coordinates associated with the discrete and continuum states. The frequency-dependent absorption spectrum associated with this classical system exhibits the same Fano line shape as the quantum-mechanical system when appropriate correspondences between classical and quantum variables are made. In the time domain, the response of this classical Fano oscillator depends upon the asymmetry parameter q that appears in the expression for the Fano line shape. In particular, under the influence of impulsive driving of the system, the discrete oscillator's phase changes by ±π/2 as q increases from zero (maximum asymmetry in the frequency domain) to ∓∞ (minimum asymmetry). Previously published ultrafast-laser-pulse-driven coherent-phonon oscillations in degenerate p-type Si [K. Kato et al., Jpn. J. Appl. Phys. 48, 100205 (2009)] are discussed in light of these theoretical results.

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Section: Coherent Phonons In Siliconmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Classical Fano oscillator

Riffe

2011

Phys. Rev. B

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“…The frequency position, o, and the full width at half maximum, G, of the peaks are reported in Table 1. The asymmetric broadening and the downshift of the one-phonon Raman line of B-doped diamond observed both in polycrystalline and in homoepitaxial samples [14][15][16]19], have been explained as the result of a Fano-type discrete-continuum interaction between the discrete zone-centre phonon state and the continuum of the electronic states induced by the presence of the dopant [15,17,19,20]. Moreover, dopant incorporation at substitutional or interstitial sites can produce stress that generally depends on the doping level.…”

Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Faggio

Messina

Santangelo

et al. 2012

Journal of Quantitative Spectroscopy and Radiative Transfer

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a b s t r a c tThanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed.

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“…The coupling factor q is a function of both the laser wavelength through the T p T e ratio and the free-carrier concentration through R(E). 32 Usually, the coupling factor keeps the same sign and changes are not easily accessible with semiconductor like diamond 33 or silicon. 34 In our case, the phonon in KC 8 and KC 24 is, strictly speaking, already a coupled mode due to non adiabaticity.…”

Section: Fano Profilementioning

confidence: 99%

Optical signatures of bulk and solutions of KC8 and KC24

Tristant

Wang

Gerber

et al. 2015

Journal of Applied Physics

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We first performed an analysis of the shape of the Raman features of potassium-intercalated graphite at stage 1 (KC 8 GIC) and 2 (KC 24 GIC), respectively. By varying the excitation energy from ultraviolet to infrared, we observed a sign change of the Fano coupling factor below and above the optical transition related to the shift of the Fermi level which was determined from first principle calculations. This behavior is explained by a sign change in the Raman scattering amplitude of the electronic continuum. The GICs were then dissolved in two different solvents (N-Methyl-2-pyrrolidone and tetrahydrofuran), and the absorbance of the graphenide solutions obtained was measured in the UV range. Two peaks were observed which correspond to the maximum of the computed imaginary part of the optical index. V C 2015 AIP Publishing LLC.

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Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes

Cited by 461 publications

References 13 publications

Classical Fano oscillator

Classical Fano oscillator

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Optical signatures of bulk and solutions of KC8 and KC24

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