Effect of final annealing on hot-electron-induced MOSFET degradation

Hsu, Fu-Chieh; Hui, J.; Chiu, K.Y.

doi:10.1109/edl.1985.26157

Cited by 28 publications

(3 citation statements)

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“…4 When hot carriers are injected in the SiO 2 films of the MOS devices, the positive charge traps near the Si/SiO 2 interface increase. [5][6][7][8] This phenomenon is expected to be caused by hydrogen released from the Si-OH and Si-H bonds in the SiO 2 film due to hot carriers. The behavior of hydrogen in generating charge traps in SiO 2 films is thus complex, as mentioned above, and is affected by the processing conditions in sample preparation.…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations for charged states of hydrogen atoms inSiO2

1997

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Charged states of H atoms in defect-free SiO 2 have been proposed from first-principles total-energy bandstructure calculations within a framework of the local-density approximation. The polarities of the charged states are determined depending on the position of the Fermi level. A positively charged state forms an Si-͑OH ϩ )-Si complex, while a negatively charged state forms an Si-H Ϫ bond. Calculated vibrational frequencies of newly formed O-H ϩ and Si-H Ϫ bonds for each charge state are found to be lower than those for neutral O-H and Si-H bonds, so the H-originated charge traps are expected to be distinguishable by either Raman or infrared spectroscopies.

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Section: Introductionmentioning

confidence: 99%

First-principles calculations for charged states of hydrogen atoms inSiO2

1997

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“…This hydrogen incorporation in Si/ SiO 2 interfacial layer has a strong relationship with annealing condition and passivation structure. 9,10) Although it is clear that PE-SiN layer has an effect on the NBTI, this layer cannot be skipped in CMOS technology due to its essential utility for chip protection. Therefore, optimized process should be proposed to improve NBTI.…”

Section: Resultsmentioning

confidence: 99%

Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime

Won-Joon¹,

Park²,

Kim³

et al. 2006

jjap

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When iron is evaporated in a dilute atmosphere of helium the deposit consists of very small particles whose size depends primarily on the helium pressure. If these particles are allowed to fall on to a ferromagnetic specimen they deposit preferentially at the domain boundaries. The Bitter patterns so formed can be examined optically or, for high resolution work, may be replicated and examined in the electron microscope.

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“…Efforts have been made to optimize the conditions of PMA on MOSFETs fabricated with a variety of materials, including silicon. [8][9][10][11][12][13] However, due to some intrinsic shortcomings of MOSFETs, such as the limitations imposed by the high subthreshold slopes (SS) and the scaling limits, 14,15) researchers have started looking for alternatives. [16][17][18][19][20][21] Tunneling field-effect transistors (TFETs) are promising devices that have attracted the attention of many manufacturers, because they can overcome the SS limitation of MOSFETs, and function with extremely low power consumption.…”

Section: Introductionmentioning

confidence: 99%

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Song

Babu

et al. 2020

Jpn. J. Appl. Phys.

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Many attempts have been made to improve the performance of tunneling field-effect transistors (TFETs). Among these, post metal annealing (PMA) can induce enhanced device performance, but its application to TFETs has not been sufficiently explored. In this study, the temperature, time, atmosphere, and pressure conditions for the PMA of a TFET device are optimized. To evaluate if any loss in performance occurred after PMA, we tested the transistors' electrical parameters, specifically their subthreshold slopes and low-frequency noises at 10 Hz. Moreover, the interface trap charge density of the TFETs is extracted as a measure to evaluate their performance. As a result, lower temperatures and shorter PMA times are essential compromises, and the performances were improved under H 2 and D 2 -containing atmospheres. Furthermore, the benefit of having high gas pressures during PMA is noted, because as the number of hydrogen/deuterium atoms increases, more traps-removing surface-gas interactions can occur.

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Effect of final annealing on hot-electron-induced MOSFET degradation

Cited by 28 publications

References 0 publications

First-principles calculations for charged states of hydrogen atoms inSiO2

First-principles calculations for charged states of hydrogen atoms inSiO2

Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

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