2018
DOI: 10.1063/1.5029121
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Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

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Cited by 11 publications
(5 citation statements)
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“…H c is about 200 Oe at room temperature, which is relatively high compared to epitaxial ternary and binary silicides, exhibiting H c value lower by one order of magnitude. [60][61][62] Formation of ternary Fe-Co-Si alloys is unlikely. Since the Co atoms were deposited after the Fe ones, one can guess the system with a thin Co layer atop the FeSi alloy.…”
Section: Magnetic Propertiesmentioning
confidence: 99%
“…H c is about 200 Oe at room temperature, which is relatively high compared to epitaxial ternary and binary silicides, exhibiting H c value lower by one order of magnitude. [60][61][62] Formation of ternary Fe-Co-Si alloys is unlikely. Since the Co atoms were deposited after the Fe ones, one can guess the system with a thin Co layer atop the FeSi alloy.…”
Section: Magnetic Propertiesmentioning
confidence: 99%
“…The classifications include pnictides and its associated materials, [ 14 ] chalcogenides linked with wurtzite conformation, [ 15 ] ferrites, [ 16 ] oxides, [ 17 ] perovskites, [ 18 ] and novel compounds [ 19,20 ] demonstrating half metallicity and good thermoelectric response but on the other hand the smart materials (Heusler materials) attaining inclinations over other classifications due to their better stability and good thermoelectric presentation. The latest experimental investigations in Heusler materials associated with thin films including Cr 2 CoGa, [ 21 ] Co 2 MnGe, [ 22 ] Co 2 FeAl, [ 23 ] Fe 2 CoSi, [ 24 ] Fe 2 CrGa, [ 25 ] Co 2 MnSi, [ 26 ] Co 2 FeSn, [ 27 ] and Cu 2 MnX (X = Al, Si, Ge, Sn) [ 28 ] also hold certain innovative properties. By the inspiration of the said properties and keeping in consideration the vital applications of the present set of Heusler materials, we have predicted Cobalt‐based full‐Heusler alloys.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, only one channel of electrons behaves as a conductor whereas the other channel behaves as a semiconductor. In spintronic applications, a HMF that shows a full spin polarization is an ideal material due to the possibility of using it in different devices such as magnetic tunneling junction [12], spin light emission diodes [13]random‐access memories [10, 14], and spin transfer torque applications [15]. Full spin polarization was envisioned in many types of materials such as dilute magnetic compounds [16], magnetic oxides [17], and Heusler alloys [18, 19].…”
Section: Introductionmentioning
confidence: 99%