Effect of filament temperature and deposition time on the formation of tungsten silicide with silane

Sveen, Chris E.; Shi, Yujun

doi:10.1016/j.tsf.2011.01.327

Cited by 10 publications

(15 citation statements)

References 18 publications

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“…Similar growth behavior was observed in many other deposition studies. 9,10,19,27,35,36 In the first stage of deposition (up to 3 h), the corresponding diffusion coefficient was determined to be 6.8 × 10 -16 m 2 s -1 , which is close to the diffusion coefficient of carbon in W 2 C reported in the literature. 37 In the second stage, between 3 and 6 h, 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 involved a hydrogen elimination to form a cyclic silylene intermediate, 1,3-disilacyclobut-1-ylidene (I), which quickly inserted into the Si-H bond of the parent DSCB molecule to form 1,1'-bis(1,3-disilacyclobutane) (route a in Scheme 1).…”

Section: Resultssupporting

confidence: 82%

“…In the deposition of Si films using SiH 4 , the growth of a silicide layer on the W or Ta filament was commonly observed. 6,7,9 Recently, our laboratory has studied the structural changes in W wires when they are exposed to different four-membered-ring (di)silacyclobutane molecules, including 1-silacyclobutane (SCB) 8 and 1,1,3,3-tetramethyl-1,3-disilacyclobutane (TMDSCB). 12,20 These organosilicon compounds are potentially useful single-source precursor gases to replace the SiH 4 /hydrocarbon mixtures that are conventionally used for silicon carbide thin film deposition by Cat-CVD.…”

Section: Introductionmentioning

confidence: 99%

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Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

2015

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Metal wires (typically made of W or Ta) serve as catalysts to decompose the precursor gases to form reactive species in the technique of catalytic chemical vapor deposition. The reactions of these reactive species with the heated wire cause structure changes in the wire, which affects its catalytic properties and lifetime. Here, we report a systematic study on characterizing the structural changes in W and Ta wires when they are exposed to 1,3-disilacylobutane, a useful single-source precursor for SiC film deposition. We have shown that filament temperature, reaction time, and filament material are among the important factors in determining the nature of metal alloys formed. Formation of crystalline W 2 C, SiC, and W 5 Si 3 (weak) was observed on W, whereas crystalline TaC, SiC, and Ta 5 Si 3 (weak) were formed on Ta. While both filaments proved to form cubic crystalline 3C-SiC at low temperatures, alloying has taken different paths at higher temperatures. Between 1400 -2400 °C, alloying in W was dominated by the formation of W 2 C with little contribution from WC. For Ta, the main alloy formed was TaC in the temperature range of 1400 -2000 °C. Heating the aged Ta filament to temperatures higher than 2000 ºC tended to recover the metal wire. This same practice does not seem to work for W wires since more W 2 C are formed at high temperatures. It is concluded that Ta outperforms W for SiC film growth in its resistance to forming more carbides and its ability to recover at high temperatures.

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Section: Resultssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

2015

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“…However, W filaments suffer from a short lifetime, especially at lower filament temperatures. [15][16][17][18] In contrast, a Ta filament lasts longer since it is less prone to form silicides on its surface. 19,20 Despite this advantage, little is known about the gas-phase chemistry when using these precursor molecules with Ta as a filament.…”

Section: Introductionmentioning

confidence: 99%

Unraveling the complex chemistry using dimethylsilane as a precursor gas in hot wire chemical vapor deposition

Toukabri

Shi

2014

Phys. Chem. Chem. Phys.

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The gas-phase reaction chemistry when using dimethylsilane (DMS) as a source gas in a hot-wire chemical vapor deposition (CVD) process has been studied in this work. The complex chemistry is unraveled by using a soft 10.5 eV single photon ionization technique coupled with time-of-flight mass spectrometry in combination with the isotope labelling and chemical trapping methods. It has been demonstrated that both free-radical reactions and those involving silylene/silene intermediates are important. The reaction chemistry is characterized by the formation of 1,1,2,2-tetramethyldisilane (TMDS) from dimethylsilylene insertion into the Si-H bond of DMS, trimethylsilane (TriMS) from free-radical recombination, and 1,3-dimethyl-1,3-disilacyclobutane (DMDSCB) from the self dimerization of either dimethylsilylene or 1-methylsilene. At low filament temperatures and short reaction time, silylene chemistry dominates. The free-radical reactions become more important with increasing temperature and time. The same three products have been detected when using tantalum and tungsten filaments, indicating that changing the filament material from Ta to W does not affect much the gas-phase reaction chemistry when using DMS as a source gas in a hot-wire CVD reactor.

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“…To date, W and Ta metal wires have been the most commonly used catalysts [8][9][10][11]. However, the catalyst surface is easily converted to silicide during the reaction [12][13][14][15][16], which leads to a lower deposition rate for the film due to deactivation of the catalyst [17]. Worse still, quality of the prepared Si film declines with the duration of the reaction [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films

et al. 2012

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Effect of filament temperature and deposition time on the formation of tungsten silicide with silane

Cited by 10 publications

References 18 publications

Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1,3-Disilacyclobutane

Unraveling the complex chemistry using dimethylsilane as a precursor gas in hot wire chemical vapor deposition

Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films

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