Effect of Fe metal on the growth of silicon oxide nanowires

Liu, Weilong; Hsieh, Shu-Huei; Chen, Ching He; Chen, W.J.

doi:10.1016/s1674-4799(09)60057-1

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…at an elevated temperature. Liu et al used Fe as a catalyst for the growth of the SiO x nanowires [3]. Jiang et al produced the SiO x nanowires by using iron-cobalt-nickel (Fe-Co-Ni) alloy nanoparticles as the catalyst and showed that they had a strong blue-green emission [4].…”

Section: Introductionmentioning

confidence: 99%

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires

Johari¹,

Johari²,

Rana³

et al. 2014

WJNSE

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In the present work, one-dimensional nanostructures of silicon oxide (SiO x) have been synthesized by thermal annealing method with and without chromium thin film on silicon substrate. The synthesis was carried out at different process temperatures ranging from 1000˚C to 1100˚C by using gold/chromium (Au/Cr) catalysts stack layer on the Si substrate in nitrogen (N 2) ambience. The as-synthesized SiO x nanostructures have tetragonal rutile structure and show polycrystalline nature. The SEM images reveal wire-like nanostructures on the substrate with and without chromium thin film. Under the catalytic reaction of the gold/chromium metal, the density of SiO x nanowires is enhanced, since the Cr layer serves as a diffusion barrier for the diffusion of the gold downwards into the Si substrate. The vapor-liquid solid (VLS) growth mechanism is found to be dominant in the growth of SiO x nanowires. Furthermore, X-Ray diffraction microscopy (XRD) and Photoluminescence spectroscopy (PL) analysis conclude the defect free growth of the SiO x nanowires on gold/chrome/silicon substrate.

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Section: Introductionmentioning

confidence: 99%

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires

Johari¹,

Johari²,

Rana³

et al. 2014

WJNSE

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Localized Growth of Silicon Oxide Nanowires by Micro‐Afterglow Oxidation

Arnoult

Gries

Henrion

et al. 2012

Plasma Processes & Polymers

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Silicon oxide nanowires are synthesised below 523 K by a non‐VLS mechanism on different substrates: Fe‐0.5 wt.‐%Si and Fe‐1.5 wt.‐%Si alloys and silicon wafers coated or not by 30‐nm thick coatings of iron. An Ar‐O2 micro‐afterglow is used to feed the substrate with oxidising species over an area of ≈2 mm2. In this area, circular bundles of nanowires appear after 15 min and are randomly distributed. Each bundle diameter increases with time and reaches 50 µm. After several hours, bundles overlap and give a continuous carpet of nanowires. TEM analyses show that no iron is found in the nanowires, whatever the substrate. A growth mechanism, based on the emergence of a surface defect is proposed.

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Preparation of SiO2 nanowires from rice husks by hydrothermal method and the RNA purification performance

Lu¹,

Cao²,

Meng³

et al. 2016

Chemical Physics Letters

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Effect of Fe metal on the growth of silicon oxide nanowires

Cited by 5 publications

References 13 publications

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires

Localized Growth of Silicon Oxide Nanowires by Micro‐Afterglow Oxidation

Preparation of SiO2 nanowires from rice husks by hydrothermal method and the RNA purification performance

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Effect of Fe metal on the growth of silicon oxide nanowires

Cited by 5 publications

References 13 publications

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO&lt;sub&gt;x&lt;/sub&gt;) Nanowires

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO&lt;sub&gt;x&lt;/sub&gt;) Nanowires

Localized Growth of Silicon Oxide Nanowires by Micro‐Afterglow Oxidation

Preparation of SiO2 nanowires from rice husks by hydrothermal method and the RNA purification performance

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Product

Resources

About

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires

Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO<sub>x</sub>) Nanowires