Abstract:In defect engineering, defects are intentionally introduced in a substrate to modify dopant behaviour. In this work, we used high resolution depth profiling and electrical characterization to analyse As and Sb behaviour in Si substrates with and without excess vacancies. Vacancies were generated by nitrogen or oxygen ion pre-implantation prior to dopant (As or Sb) implantation. Separation by implanted oxygen (SIMOX) samples were also doped and analysed. The results obtained for Si without vacancies and SIMOX w… Show more
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