Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

Abstract

The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.

Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

“…The details of this technique have been reported elsewhere [38,39]. The growth took place inside high purity quartz ampoules being 30 cm long and 12 mm inner diameter.…”

Analysis of Er incorporation on GaSb substrates by diffusion

“…The GaSb:Er ingot was grown in an oscillating Bridgman system [6] The starting material in the ampoule ____________________ was heated up to 850ºC, and then homogenized during 24h with an oscillating angle of ±30º .After homogenization process, the ampoule was pulled down with a velocity of 4mm/h. The wafer was polished up to 0.3 microns with alumina powder [5,7].…”

“…The studied methods are: a Bridgman bulk crystal growth of a GaSb:Er doped crystal and [5] b Er 2 O 3 contact diffusion over pure GaSb substrates. Photoluminescence spectra were obtained from both bulk and diffused samples in order to study the influence of the Er ions in the luminescent mechanism.…”

Cathodoluminescence study of ytterbium doped GaSb

“…GaSb, with a band gap of about 0.8 eV, and GaSb based structures are materials of increasing interest for a number of potential applications in the infrared range [1] as for instance thermo-photovoltaic cells, laser diodes or photodetectors with high quantum efficiency. Rare earth ions (Er, Nd and Gd) have been incorporated into GaSb by doping during the growth process and the structural and luminescence properties of the crystals have been investigated [2][3][4][5][6][7][8]. Er doping has been found [2,7] to produce a marked increase of the cathodoluminescence intensity of GaSb as well as a decrease of the emission bands related to native acceptors (band A) and to the presence of Te.…”