Cathodoluminescence study of ytterbium doped GaSb

Abstract

Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb 3+ ions has been detected.

Cathodoluminescence Quenching in Yb-Doped ZnO Nanostructures

“…Our results show that the CL emissions of ZnO nanostructures quench on Yb incorporation, either by physical or by chemical method. Similar effect has been observed in Yb doped GaAs [16] and GaSb [17], where, apparently the deep electron traps affect the energy transfer process from the host to Yb 3+ . However, in ZnO, it has been observed that the quenching of their luminescence by the incorporation of Eu 3+ is due to activation of RE ions through an energy transfer process from ZnO host [18].…”

Spatially resolved cathodoluminescence of luminescent materials using an EDX detector

“…Cathodoluminescence (CL) detection with a scanning electron microscope (SEM) is a powerful technique for investigating the lateral distribution of defects in semi‐conductors and insulators (Yacobi & Holt, 1986; Poelman et al , 2001; Poelman et al , 2004; Hidalgo et al , 2005; Martinez et al , 2007) as well as in mineralogy (Townsend et al , 1999; Edwards et al , 2007; Pownceby et al , 2007). Depending on the energy of the primary beam (Petrov, 1992; Donolato, 1994; Gelhausen et al , 2001), the technique couples a sub‐micron spatial resolution (Gustafsson, 2006), to an excellent detection limit (Yacobi & Holt, 1986) that is orders of magnitude better than what is achievable with other techniques for micro‐analysis, like Auger electron spectroscopy (AES) and EDX.…”