Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE

Al-Ahmadi, Noorah Ahmed; Al-Jawhari, Hala

doi:10.1016/j.rinp.2015.12.009

Cited by 5 publications

(5 citation statements)

References 11 publications

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“…The thicker epitaxial layer of a similar material showed lower barrier height, which is confirmed by the results [ 21 ]. Some of the Schottky diodes follow the TE mechanism, whereas others do not follow this mechanism because of the patches related to decreased barrier height that is embedded in the interface of the Schottky diodes.…”

Section: Resultssupporting

confidence: 80%

“…Barrier height inhomogeneity (BHI) causes abnormal electrical behavior in the Schottky barrier [ 17 , 18 , 19 , 20 ]. When the barrier height fluctuates between low and high regions, it is considered an inhomogeneous barrier height and can be modeled with a Gaussian distribution [ 21 ]. The theoretical values of the Schottky barrier height ( Φ b ) obtained from equation [ 3 ] are shown in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

“…The barrier heights Φ b had a value of 1.071 eV for N1 devices and 0.953 eV for N2 devices. N1 and N2 diodes have similar temperature requirements regarding barrier height as compared with the barrier heights of diodes with a thick epitaxial layer and the values of those with a thin epitaxial layer increased [ 21 ] ( Figure 3 ).

Figure 3 Plot of ln (I S /T 2 ) versus 10 3 /T of Schottky diode with epitaxial layer thicknesses for (a) 1.5 μm and (b) 2 μm.…”

Section: Resultsmentioning

confidence: 99%

“…A study on the linear association between ideality factor and barrier height revealed that the lateral homogeneous Schottky barrier diodes had 0.866 eV for the Au (65 nm)/n-GaAs diodes and 0.940 eV for the Au (5 nm)/n-GaAs diodes [33]. The development of in-depth level GaAs defects is related to the MBE-grown AlGaAs when degrading the electrical performance [21]. The intercept of the Figure 7 which is the value of Richardson constant A** (Eq.…”

Section: Resultsmentioning

confidence: 99%

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi

2020

Heliyon

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The effects of an epitaxial layer on the rectifying behavior of n -GaAs/Ti/Au/Si:Al 0.33 Ga 0.67 As diodes have been examined through the inhomogeneity model on n + -GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoretical models. The inhomogeneity model was used to electrical behavior of these diodes was explained. The barrier height inhomogeneity model reveals a 13% and 15% barrier height inhomogeneity in N1 and N2 Schottky diodes, respectively. The ideal thermionic emission behavior increases the ideality factors and reduces barrier heights. Within the entire temperature range, the effective Schottky barrier for a thin epitaxial layer was higher. Such results depicted the presence of defects in the thick layer, which decreased the barrier height and ultimately degraded diode performance. The thermionic emission theory along with Gaussian distribution of barrier heights is explained by the temperature dependence of the forward bias current-voltage-temperature (I-V-T) features.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Figure 3 Plot of ln (I S /T 2 ) versus 10 3 /T of Schottky diode with epitaxial layer thicknesses for (a) 1.5 μm and (b) 2 μm.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi

2020

Heliyon

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“…Therefore, in the neutral region (-n), far away from the junction, the current is purely electronic and is determined by the majority drift, resulting from the presence of a very weak internal electric field. This rationale is attributed to Shockley, who provided experimental proof along with Hynes in 1951 [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Study the Emitter-Base Forward Current in Heterojunction Bipolar Transistors Using Python

Preduşcă,

Avram

2024

The Scientific Bulletin of Electrical Engineering Faculty

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In GaAs-type materials, the primary mechanism for intra-valley scattering of low-energy electrons is their interaction with acoustic photons. These collisions are of the elastic and isotropic type, with their main effect being the nearly uniform scattering of the velocity vector of the electrons. Since the drift current in heterojunction bipolar transistors is proportional to the electric field, the contribution of the majority drift current cannot be neglected, as even a very small internal field produces a significant current when the number of carriers is very high. At the metallurgical heterojunction (x = 0), the total current is equal to the sum of the two thermionic emission components. The paper analyses the variation of the direct current of the Al0.3Ga0.7As/GaAs heterojunction, used as an emitter-base NP junction in heterojunction bipolar transistors, using the Python program.

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Impact of ZnO nanoparticles on electrical characteristics of herbal dye-based organic Schottky diode

et al. 2022

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Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE

Cited by 5 publications

References 11 publications

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Study the Emitter-Base Forward Current in Heterojunction Bipolar Transistors Using Python

Impact of ZnO nanoparticles on electrical characteristics of herbal dye-based organic Schottky diode

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