Study the Emitter-Base Forward Current in Heterojunction Bipolar Transistors Using Python
G. Preduşcă,
Miruna Avram
Abstract:In GaAs-type materials, the primary mechanism for intra-valley scattering of low-energy electrons is their interaction with acoustic photons. These collisions are of the elastic and isotropic type, with their main effect being the nearly uniform scattering of the velocity vector of the electrons. Since the drift current in heterojunction bipolar transistors is proportional to the electric field, the contribution of the majority drift current cannot be neglected, as even a very small internal field produces a s… Show more
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