Effect of Electric Field on Magnetism of Ni Thin Films via Antiferromagnetic NiO

Abstract

Effects of electric fields on magnetization of ferromagnetic Ni films grown on a Cu(001) single crystal covered with antiferromagnetic NiO overlayer are investigated by means of X-ray absorption spectroscopy (XAS), X-ray magnetic circular dichroism (XMCD), and magneto-optical Kerr effect (MOKE). The growth of the NiO overlayer on the Ni film is confirmed by XAS, and it is revealed by XMCD and MOKE that the NiO/Ni films show a spin reorientation transition from in-plane to perpendicular magnetization with increasing Ni thickness. It is also observed that the coercive field of the Ni films increases as the NiO thickness increases, possibly due to the interaction with antiferromagnetic NiO. Remanent magnetization of the Ni film is found to be modified by the application of electric fields. The possible origin of the electric-field effects is discussed, and some change in magnetic anisotropy of the Ni film is suggested.

Exchange Bias in Thin Films—An Update

“…Exchange bias in Ni/NiO thin films was already found in 1967 [32] and afterwards reported, similar to Co/CoO, for core-shell nanoparticles, nanotubes, and other nanostructures [90][91][92][93].…”

GLUCOSE SENSOR USING CYCLIC VOLTAMMETRIC METHOD BASED ON NiO/ITO ELECTRODE

“…NiO is one of the materials that have many of these applications today, such as gas sensors [1], [2], supercapacity [3] - [5], magnetism [6], [7], etc., in which the electrochemical glucose sensor is one of the fields which have been interested and attracts many researchers. Glucose sensor plays an important role in the diagnosis of diabetes by signaling high levels of glucose in the blood [8], [9].…”