2019
DOI: 10.1016/j.tsf.2019.04.034
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Thermal annealing induced competition of oxidation and grain growth in nickel thin films

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Cited by 11 publications
(5 citation statements)
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“…Interestingly, magnetic force measurements at room temperature showed a magnetic strip pattern in the nealed for 90 min (Figure 9). This may be correlated with an increased NiO( in this special sample, as compared to the Ni(200) texture found for the othe durations [95]. [96].…”
Section: Ni/nio Thin Film Systemssupporting
confidence: 58%
See 1 more Smart Citation
“…Interestingly, magnetic force measurements at room temperature showed a magnetic strip pattern in the nealed for 90 min (Figure 9). This may be correlated with an increased NiO( in this special sample, as compared to the Ni(200) texture found for the othe durations [95]. [96].…”
Section: Ni/nio Thin Film Systemssupporting
confidence: 58%
“…Ni thin films can be oxidized in air, with the NiO layer thickness depending on the environmental temperature [94]. For a constant annealing temperature of 400 • C in oxygen atmosphere, on the other hand, Raghavan et al investigated the influence of the annealing time and found an increase of the Ni crystal size with annealing time for shorter durations which finally saturated [95]. At the same time, the NiO layer grew at the cost of the Ni layer.…”
Section: Ni/nio Thin Film Systemsmentioning
confidence: 99%
“…We therefore can find that the material of the substrate also affects the magnetic domain formation. As reported in the article by L. Raghavan et al, 52) the SiO 2 thin films play an important role as a buffer layer between Ni nanolayers and Si substrate that prevent the formation of nickel silicide (Ni x Si) at the interface between them after the thermal annealing. The formation of nickel silicide at the interface possibly influences the MFM observations for S1 and S2.…”
Section: Discussionmentioning
confidence: 92%
“…H.R. is a pivotal parameter in the annealing process of NiO x , LHR can exert specific and advantageous effects on NiO x , particularly by facilitating oxygen diffusion, rectifying lattice defects, promoting grain growth, and enhancing interfacial properties. , The surface information state of NiO x films was analyzed by X-ray photoelectron spectroscopy (XPS), as shown in Figure c,d. Figure c shows two peaks at 855.6 and 853.9 eV, which could be attributed to Ni 3p and Ni 2p of NiO x -Control, respectively.…”
Section: Resultsmentioning
confidence: 99%