Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB

Dohi, Takaaki; Kanai, Shun; Okada, Atsushi; Matsukura, F.; Ohno, Hideo

doi:10.1063/1.4959905

Cited by 32 publications

(26 citation statements)

References 32 publications

(37 reference statements)

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“…In this case, the A change must be ~17% if the EF-induced change in H D obtained here was only caused by the modulation of Δ. However, the EF-induced change in A (or the exchange coupling) is expected to be a few percent at most ( 20 , 21 ). Thus, the EF change in H D was most likely caused by the V G modulation of Dt .…”

Section: Resultsmentioning

confidence: 86%

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

et al. 2018

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Section: Resultsmentioning

confidence: 86%

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

et al. 2018

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“…In Figure a–c, we show the domain configuration dependence on various parameters of (a) K eff , (b) A ex , and (c) M s with d MTJ up to 350 nm, using the typical values reported in similar structure. [ 23,24,30,35,43 ] Overall, the FL splits from single domain to two or more domains with increasing d MTJ . To obtain multi‐domain structure in smaller p‐MTJs, the FL properties should be carefully tuned.…”

Section: Resultsmentioning

confidence: 99%

Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions

Fidalgo

Silva

et al. 2020

Adv Elect Materials

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One of the critical issues in spintronics‐based technologies is to increase the data storage density. Current strategy is based on shrinking the devices size down to tens of nanometers, or several nanometers, which is reaching its limit. A new proposal is to use multi‐level cells (MLCs) to store more than two bits in each cell. In this work, the multi‐level switching is realized in CoFeB/MgO/CoFeB based nano‐scale single perpendicular magnetic tunnel junctions (p‐MTJs) with three or four stable resistance states. A large range of writing currents for each state is obtained, accompanying with a good repeatability of set‐reset operations between different states. The developed multi‐domain model perfectly matches the experimental results, reflecting the magnetic behaviors during multi‐level switching. Furthermore, current‐driven domain wall (DW) motion is revealed in the circular p‐MTJs, where the DW position can be reversibly manipulated by applied current. To design high‐performance multi‐level p‐MTJs, the parameter diagrams are calculated, suggesting various feasible strategies to improve the multi‐level switching through materials optimization and devices geometry. In summary, the demonstration of multi‐level switching in single p‐MTJ shows the high potential of realizing the new generation of p‐MTJ‐based multi‐level spintronic devices, such as multi‐level memories and spin‐neuron devices.

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“…A recent study reported modification of exchange stiffness by applying Electric field 44 which is not considered in our model. However, a positive (negative) electric field will increase (decrease) the exchange stiffness which will enable easy transformation from skyrmion to ferromagnetic (ferromagnetic to skyrmion) state which can be understood from the energy profile plotted in Fig.…”

Section: Methodsmentioning

confidence: 99%

Voltage controlled core reversal of fixed magnetic skyrmions without a magnetic field

Bhattacharya

Al-Rashid

Atulasimha

2016

Sci Rep

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Using micromagnetic simulations we demonstrate core reversal of a fixed magnetic skyrmion by modulating the perpendicular magnetic anisotropy of a nanomagnet with an electric field. We can switch reversibly between two skyrmion states and two ferromagnetic states, i.e. skyrmion states with the magnetization of the core pointing down/up and periphery pointing up/down, and ferromagnetic states with magnetization pointing up/down, by sequential increase and decrease of the perpendicular magnetic anisotropy. The switching between these states is explained by the fact that the spin texture corresponding to each of these stable states minimizes the sum of the magnetic anisotropy, demagnetization, Dzyaloshinskii-Moriya interaction (DMI) and exchange energies. This could lead to the possibility of energy efficient nanomagnetic memory and logic devices implemented with fixed skyrmions without using a magnetic field and without moving skyrmions with a current.

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Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB

Cited by 32 publications

References 32 publications

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions

Voltage controlled core reversal of fixed magnetic skyrmions without a magnetic field

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