Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshio; Okuda, Hiroyuki; Kurita, Kazunari

doi:10.7567/jjap.57.011301

Cited by 18 publications

(34 citation statements)

References 31 publications

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“…However, Okuyama et al reported that the HRTEM observation results they obtained for the carbon cluster ion implantation projection range in silicon wafers showed no extended defects such as dislocations and dislocation loops in range after heat treatment. Moreover, by using electron diffraction defect analysis, they observed single‐electron diffraction pattern, which indicate that Si‐C agglomeration was not induced after heat treatment.…”

Section: Resultsmentioning

confidence: 98%

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Kurita

Kadono

Okuyama

et al. 2017

Physica Status Solidi (a)

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A new technique is described for manufacturing advanced silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication processes. Carbon and hydrogen elements are localized in the projection range of the silicon wafer by implantation of ion clusters from a hydrocarbon molecular gas source. Furthermore, these wafers can getter oxygen impurities out‐diffused to device active regions from a Czochralski grown silicon wafer substrate to the carbon cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen‐related defects in the device active regions and improve electrical performance characteristics, such as the dark current, white spot defects, pn‐junction leakage current, and image lag characteristics. The new technique enables the formation of high‐gettering‐capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly improve electrical devices performance characteristics in advanced CMOS image sensors.

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Section: Resultsmentioning

confidence: 98%

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Kurita

Kadono

Okuyama

et al. 2017

Physica Status Solidi (a)

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“…The TEM images in the C 3 H 6 -ion-implanted region of both wafers only showed defects 5 nm in size. These defects were also observed in a monomer-ion-implanted Si wafer and hydrocarbon-molecular-ion-implanted Si wafer after heat treatment [ 36 , 37 ]. It has been reported that the 5 nm defects are agglomerates consisting of C and I (C– I agglomerates), and those defects act as gettering sinks for metallic impurities [ 37 ].…”

Section: Resultsmentioning

confidence: 99%

“…These defects were also observed in a monomer-ion-implanted Si wafer and hydrocarbon-molecular-ion-implanted Si wafer after heat treatment [ 36 , 37 ]. It has been reported that the 5 nm defects are agglomerates consisting of C and I (C– I agglomerates), and those defects act as gettering sinks for metallic impurities [ 37 ]. It is considered that Cu and Ni gettering in the C 3 H 6 -ion-implanted region of both single and double epitaxial Si wafers shown in Figure 5 occurred through this type of defect.…”

Section: Resultsmentioning

confidence: 99%

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Onaka‐Masada

Kadono

Okuyama

et al. 2020

Sensors

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The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

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“…The projected range of less than 4 nm was reached at the energy of 1 keV. In another study carbon clusters such as C 3 H 5 and C 2 H 5 have been used for special shallow defect formation in silicon; such defects possessing high gettering capability for metal ions can improve CMOS image sensor parameters …”

Section: Introductionmentioning

confidence: 99%

“…In another study carbon clusters such as C 3 H 5 and C 2 H 5 have been used for special shallow defect formation in silicon; such defects possessing high gettering capability for metal ions can improve CMOS image sensor parameters. 13 Nowadays, SiC is studied as a material for high-voltage and hightemperature applications, due to its wide band gap, high thermal conductivity, and large breakdown electric field. 14,15 However, thermal diffusion doping requires temperatures higher than 1700°C because of the very low diffusion coefficients of impurities.…”

Section: Introductionmentioning

confidence: 99%

Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

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Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silicon and 4H‐SiC samples we employ Aln− (n = 1–5) clusters with energy in the range of 5–20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS; IONTOF TOF.SIMS‐5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. Results A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. Conclusions The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF‐SIMS depth profiling of the shallow cluster implantation is feasible.

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Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Cited by 18 publications

References 31 publications

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Small Al cluster ion implantation into Si and 4H‐SiC

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