Effect of doping and heat treatment on the photoluminescence of CdS films deposited by spray pyrolysis

Cu-doped CdS and its application in CdTe thin film solar cell

“…The broad defect-related band located around 1.5-2.0 eV is ascribed to the emission between the energy levels of the defects, such as, Cd vacancy (V Cd ), surface states, Cl at the lattice of S (Cl S ), S vacancy (V S ), interstitial Cd (Cdi) and the the valence band state (VB), impurities and acceptor. [24][25][26] The detailed peak components, which are ascribed to the specific emissions, are shown in Fig. 4(b).…”

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

“…The yellow band emission observed at 2.04 eV is caused by a donor-acceptor pair [26]. Ahmad-Bitar [27] reported a similar band for CdS thin films which they attributed to recombination via surface localized states, a transition from cadmium interstitial (I Cd ) to valence band, and the transition from interstitial cadmium-cadmium vacancy complex I + Cd −V − Cd which acts as a donor to an acceptor level. …”

Photocurrent application of Zn-doped CdS nanostructures grown by thermal evaporation method

“…The yellow emission in the CdS could be attributed due to the transition of Cd-interstitial donors to the valance band [4]. In addition, according to a study about heat treatment, it was understood that, yellow emission could be due to the recombination via surface localized states, a transition from I cd to the valance band, and the transition from the interstitial Cd-Cd vacancy complex that as a donor to an accepter level [16]. Furthermore, the yellow emission of the Zn-doped CdS has a tail in the red region around 700 nm (red band).…”