Effect of different types of substrate surface treatments on the graphene device performance

Abstract

Graphene–substrate interface is very crucial for analyzing graphene device performance. In this article, we have shown how the graphene device performance got affected because of different types of substrate surface treatment techniques used before graphene transfer. For fabrication of graphene devices, monolayer chemical vapor deposition (CVD) graphene was transferred onto SiO2 grown thermally on Si substrate. Forming gas annealed SiO2/Si shows better device performance as compared with as‐grown SiO2 on Si substrate. A further effect of oxygen plasma and argon plasma cleaning of SiO2 surface before graphene transfer was investigated. Forming gas annealing improves the performance and plasma treatment degrade the graphene devices' performance.

Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

“…Nitrogen plasma treatment activates the surface of the SiO 2 substrate by converting the top layers (<10 nm) to the silicon oxynitride phases [72], as shown in figure 3(a). Meanwhile, the argon plasma treatment improves bonding strength at wafer scale at room temperature [73,74]. Substrates treated by plasma could be beneficial for transferring.…”

Substrate‐dependent enhancement of the durability of EPD graphene coating as a macroscale solid lubricant

“…23 Graphene flakes retention on sliding interfaces is a critical factor for maintaining the lubricity of graphene film, even though they are severely damaged or only partially cover the contact interface. 11,24 The lubrication failure of EPD graphene film usually occurs as a result of complete removal of graphene sheets from the contact interface. 25 It was observed that the graphene film deposited on the CVD diamond surface exhibited much longer durability than those on the polished diamond surface.…”