Surface tension traction transfer method for wafer-scale device grade graphene film

Hou, Wenqiang; Xu, Youlong; Zhang, Yuan; Yao, Xiang Hua; Xu, YiJie

doi:10.1016/j.carbon.2022.12.055

Cited by 3 publications

(4 citation statements)

References 39 publications

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Section: Introductionmentioning

confidence: 99%

“…[33,34] During the transfer procedure, loss of substrate material and the introduction of defects, wrinkles, cracks, and contaminations are unavoidable, resulting in a significant decline in the performance of graphene-based nanoscale electronic devices. [35][36][37][38][39] To avoid these issues during layer transfer, research efforts on promoting transfer-free approaches for the direct synthesis of layer-tunable graphene on device-bound substrates become increasingly important and urgent. [40] In this work, we use a reverse-order Janus substrate (Cu-coated Ni on an arbitrary substrate) instead of the Ni-coated Cu in our previous ion implantation work [32] to achieve both layer-tunability and transfer-free characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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Direct synthesis of layer‐tunable and transfer‐free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two‐step process: a high‐quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device‐relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual‐metal smart Janus substrate for a diffusion‐limiting graphene formation to directly synthesize large area, high quality, and layer‐tunable graphene films on arbitrary substrates without the post‐synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device‐relevant substrates. A well‐controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C‐atoms (1 monolayer ~4 × 1015 C‐atoms/cm2). Upon thermal annealing to promote Cu‐Ni alloying, the pre‐implanted C‐atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C‐solubility in Cu. As a result, the expelled C‐atoms precipitate into a graphene structure at the interface facilitated by the Cu‐like alloy catalysis. After removing the alloyed Cu‐like surface layer, the layer‐tunable graphene on the desired substrate is directly realized. The layer‐selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer‐tunability and transfer‐free processing has the promise to advance efficient graphene‐device manufacturing and expedite their versatile applications in many fields.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Wang,

Jiang,

Baldwin

et al. 2024

Energy & Environ Materials

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“… – 9 Among them, graphene has attracted more and more researchers’ attention because of its excellent optical and electrical properties 10 – 15 The shielding effectiveness (SE) of single-layer graphene in the 2.2 to 7 GHz frequency band is 2.27 dB, 16 which is 7 times larger than the same thickness of gold film. The SE of the single polyetherimide (PEI)/reduced graphene oxide (RGO) film is 3.09 dB, and the SE of the double PEI/RGO film is 6.37 dB 17 .…”

Section: Introductionmentioning

confidence: 99%

Infrared anti-reflection film device for electromagnetic interference shielding

Shi

Liu³

et al. 2023

Opt. Eng.

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.The infrared anti-reflection film is prepared by ion beam assisted thermal evaporation deposition technology. The film has good firmness and can meet the needs of wet transfer. By adjusting the number of layers of the graphene mesh, the electromagnetic shielding and optical transparency properties are simultaneously improved. The infrared anti-reflection film and graphene mesh are combined to design and prepare a compatible electromagnetic shielding infrared anti-reflection film device with sandwich structure. The test results of the device show that the peak transmittance of the graphene mesh/infrared film/substrate/infrared film combination structure in the 3 to 5 μm band is 95.06%, and the average transmittance is 93.40%. The peak shielding effectiveness (SE) in the 12 to 18 GHz frequency band is 14.50 dB, and the average SE is 12.98 dB. It shows that the film device of this structure maintains the high transmittance of the infrared anti-reflection film and has good electromagnetic shielding effectiveness.

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“…During the post-implantation thermal annealing, the top Cu layer behaves like a "C diffusion barrier" to gradually inward diffuse into the bottom Ni layer (i.e., Cu atoms "top-down diffusion" and Ni "bottom-up diffusion"). The poor solubility of C in Cu (<0.001 at.%) [30] facilitates the implanted C ions (initially located in the Ni layer) to be ejected towards the Cu/Ni interfacial front and finally converted into graphene on the substrate promoted through the catalysis impact of the Cu-Ni alloy. [31][32][33] Removing the Cu-Ni alloy layer leaves behind the as-synthesized graphene on the substrate that was initially used to deposit the Ni film.…”

Section: Introductionmentioning

confidence: 99%

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

Wang,

Jiang,

Baldwin

et al. 2023

Preprint

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Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize layer-tunable graphene on arbitrary substrates without the post-synthesis layer transfer process. C ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates. Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed towards the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. ReaxFF was performed to elucidate the graphene formation mechanisms in this novel synthesis approach. Three ordinary devices using as-synthesized graphene were fabricated on Si, SiO2, and glass substrates to demonstrate the graphene quality of our layer-tunable and transfer-free synthesis approach and the excellent performance characteristics of these low-cost manufacturing devices: field-effect transistors, heating devices, and near-infrared photodetectors.

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Surface tension traction transfer method for wafer-scale device grade graphene film

Cited by 3 publications

References 39 publications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Infrared anti-reflection film device for electromagnetic interference shielding

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation

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