Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films

Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

“…In other reports, Rhee and Yang [6] and Maghazeii et al [7] studied the properties of Ni films deposited by electron beam evaporation. Furthermore, it was demonstrated that magnetron sputtering techniques i.e., direct-current (DC) magnetron sputtering and radio frequency (RF) magnetron sputtering could control over the sputtering conditions [8][9][10][11][12][13] and produce very high purity films owing to their clean environmentally friendly closed systems [14]. For instances, Yi et al [15] and Priyadarshini et al [16] reported on the structural, magnetic, and magnetoresistance properties, and morphology of Ni films deposited using DC magnetron sputtering.…”

Impact of a Spun-Cast MoOx Layer on the Enhanced Moisture Stability and Performance-Limiting Behaviors of Perovskite Solar Cells

“…Recently, wide band gap molybdenum oxide (MoO x ) has been suggested as a more suitable candidate for this role than copper oxide (CuO) or nickel oxide (NiO). MoO x has better charge carrier mobility properties than NiO x , that is, ∼600–3000 cm 2 V –1 s –1 for MoO x − and 0.1–3 cm 2 V –1 s –1 for NiO x . , However, it has been reported that the charge mobilities of MoO x and NiO x are significantly dependent on the fabrication processes and conditions being used. − Hossain et al prepared metal oxide thin films of MoO x and NiO x by electron beam evaporation with various deposition pressures . The highest mobilities were found to be 3.37 and 0.99 cm 2 V –1 s –1 for the MoO x and NiO x films, respectively.…”

“…Oh et al also reported the effects of a different sputtering gas mixture of Ar/O 2 on the electrical properties of NiO x films. The charge mobility was varied in a range of 0.03–0.12 cm 2 V –1 s –1 with various gas mixture ratios . Even though the use of thermally evaporated and spun-cast MoO x HTL has been demonstrated, questions regarding its device functionality/stability remain.…”

“…MoO x has better charge carrier mobility properties than NiO x , that is, ∼600−3000 cm 2 V −1 s −1 for MoO x 10−12 and 0.1−3 cm 2 V −1 s −1 for NiO x . 13,14 However, it has been reported that the charge mobilities of MoO x and NiO x are significantly dependent on the fabrication processes and conditions being used. 10− 16 Hossain et al prepared metal oxide thin films of MoO x and NiO x by electron beam evaporation with various deposition pressures.…”

Thickness dependent ferromagnetism in thermally decomposed NiO thin films

“…Recently nanostructured nickel oxide (NiO) materials have received enormous interest due to their novel properties, which are considerably different from those observed in bulk material, and their potential applications in a wide variety of technological areas such as spin valves, magnetic recording, resistive random access memory, electrochromic, supercapacitors, alkaline batteries, etc [1][2][3][4][5][6]. The proper control of size, shape, morphology and surface of nanostructures remains a challenge as the properties are strongly depending on the structures at the nanoscale.…”