Effect of Different Bonding Materials on Flip-Chip LED Filament Properties

Guan, Chengyu; Zou, Jun; Chen, Qingchang; Shi, Mingming; Yang, Bobo

doi:10.3390/app10010047

Cited by 8 publications

(2 citation statements)

References 38 publications

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“…For the purposes of comparison, a thermal simulation of the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer and symmetrical electrode were considered. In related research, it was shown that the heat generated by the LED chip is mainly due to Joule heat associated with the high resistivity p-GaN and the non-radiative recombination of multiple quantum wells (MQWs) [37][38][39]. The distribution of Joule heat and non-radiative recombination is closely related to the current density distribution.…”

Section: Fem Model and Parametersmentioning

confidence: 99%

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Sun,

Dong,

Luo

et al. 2024

Nanomaterials

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In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm.

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Section: Fem Model and Parametersmentioning

confidence: 99%

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Sun,

Dong,

Luo

et al. 2024

Nanomaterials

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“…Considering the high power density and operating temperature of IGBT modules, the selection of brazing materials with high melting points is essential for their packaging. For instance, Sn-Zn brazing materials and Sn-Ag-Cu brazing materials are often utilized due to their high melting points [12].…”

Section: Introductionmentioning

confidence: 99%

Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation

Chen

Liu

et al. 2023

Materials

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The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a critical research topic. This study focuses on the damage of power device solder layers and applies heat transfer theory. Three typical solders for welding IGBTs (92.5Pb5Sn2.5Ag, Sn3.0Ag0.5Cu (SAC305), and nano-silver solder paste) are analyzed using JMatPro software to simulate their characteristics. First, a finite element analysis method is used to simulate the entire IGBT module with ANSYS Workbench platform. The study compares the impact of three types of solders on the overall heat transfer of the IGBT module under normal operation and welding layer damage conditions. The characteristics are analyzed based on changes in the junction temperature, heat flow path, and the law of thermal stress and deformation. The findings indicated that under steady-state working conditions, adjacent chips in a multi-chip IGBT module had significant thermal coupling, with a maximum temperature difference between chip junctions reaching up to 13 °C, and a phenomenon of heat concentration emerged. The three types of solders could change the thermal conductivity and heat transfer direction of the IGBT module to varying degrees, resulting in a temperature change of 3–6 °C. Under conditions of solder layer damage, the junction temperature increased linearly with the severity of the damage. In the 92.5Pb5Sn2.5Ag and Sn3.0Ag0.5Cu (SAC305) solders, the presence of intermetallic compounds (IMCs) led to more stress concentration points in the solder layer, with the maximum stress reaching 7.14661 × 107 MPa and concentrated at the edge of the solder layer. The nano-silver solder layer had the best thermal conductivity, and the maximum thermal deformation under the same conditions was only 1.9092 × 10−5 m.

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RETRACTED ARTICLE: Effect of grain size on the interface structure and shear behavior of lead-free solder joints

Zhai

Chen

et al. 2021

J Mater Sci: Mater Electron

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Effect of Different Bonding Materials on Flip-Chip LED Filament Properties

Cited by 8 publications

References 38 publications

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation

RETRACTED ARTICLE: Effect of grain size on the interface structure and shear behavior of lead-free solder joints

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