Effect of diborane on the microstructure of boron-doped silicon nanowires

Pan, Ling; Lew, Kok Keong; Redwing, Joan M.; Dickey, Elizabeth C.

doi:10.1016/j.jcrysgro.2005.01.091

Cited by 92 publications

(89 citation statements)

References 23 publications

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“…[23] Diborane, trimethylboron, and PH 3 are gaseous compounds commonly used as dopants in a gas-phase synthesis of doped SiNWs through the so-called vapor-liquid-solid (VLS)-CVD method. [23][24][25][26] The post-doping process has advantages such as flexibility in the selection of the vapor-phase precursors for introducing dopant species and selective patterning of the doped SiNWs. [23] In our study we have applied the post-doping method and investigated the biocompatibility of the resulting doped SiNWs as compared with the as-grown undoped SiNWs.…”

Section: Resultsmentioning

confidence: 99%

In Vitro Biocompatibility of n‐Type and Undoped Silicon Nanowires

et al. 2010

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The biocompatibility of undoped and n‐type silicon nanowires (SiNWs), synthesized by metal‐catalyzed chemical vapor deposition, was investigated in vitro, and compared with that for SiO2‐coated silicon wafers. In cell interaction studies, L929 mouse fibroblast cells were used, in which MTT assay, AO/PI dye staining, cell proliferation/growth, and changes in cell adhesion/morphology on the surfaces were applied and investigated. Heamocompatibility of these materials were also tested. No significant cytotoxic effects were observed for either the undoped or for the n‐type phosphorus‐doped SiNWs. The cells on the nanowires exhibit high viability, normal nuclear, and morphological structure. They have shown no considerable negative blood response with respect to the control.

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Section: Resultsmentioning

confidence: 99%

In Vitro Biocompatibility of n‐Type and Undoped Silicon Nanowires

et al. 2010

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“…That is, doping of VLS grown Si needles was demanded. In literature we find several reports [7,8] on VLS grown doped Si nanowires, having diameter in nanometer range, and their devices. However, considering our target applications (e.g.…”

Section: Introductionmentioning

confidence: 99%

Interface pn junction arrays with high yielded grown p-Si microneedles by vapor–liquid–solid method at low temperature

Islam

Ishida

2015

Solid-State Electronics

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“…[1][2][3][4][5][6][7][8] In these studies, the effects of impurity doping were investigated mainly by electrical transport measurements. [1][2][3][4][5][6][7][8] The results showed a reduction in resistivity in doped SiNWs, suggesting that SiNWs are amenable to doping with impurity atoms. We recently investigated and characterized impurity doping in SiNWs synthesized by laser ablation.…”

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Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Fukata

Mitome

Bando

et al. 2008

Applied Physics Letters

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Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

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Effect of diborane on the microstructure of boron-doped silicon nanowires

Cited by 92 publications

References 23 publications

In Vitro Biocompatibility of n‐Type and Undoped Silicon Nanowires

In Vitro Biocompatibility of n‐Type and Undoped Silicon Nanowires

Interface pn junction arrays with high yielded grown p-Si microneedles by vapor–liquid–solid method at low temperature

Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

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