2020
DOI: 10.1007/s10854-020-04300-y
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Effect of deposition time on photoelectrochemical performance of chemically grown Bi2Se3-sensitized TiO2 nanostructure solar cells

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Cited by 10 publications
(3 citation statements)
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“…8(b) shows the energy level diagram of the device. [56][57][58] According to the photoluminescence spectrum in Fig. 5(d), there are defect states at the vacuum energy levels of À3.89 and À4.06 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…8(b) shows the energy level diagram of the device. [56][57][58] According to the photoluminescence spectrum in Fig. 5(d), there are defect states at the vacuum energy levels of À3.89 and À4.06 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the photocurrent increased as the increase of conversion efficiency, which is consistent with the test results of photocurrent density (Figure 3a). TiO2/Bi2Se3 composite is a type-II band gap arrangement, which means that the edge of the conduction band of TiO2 is located between the CB and the VB of Bi2Se3 [37].…”
Section: Resultsmentioning
confidence: 99%
“…In addition, based on two semiconductors with unequal band gaps by physical contact each other, construction of heterogeneous photocatalyst systems is also a set of effective schemes to achieve highly efficient solar energy conversion to chemical energy [28][29][30][31][32]. The narrow band gap semiconductor is introduced into the host semiconductor, which can broaden the practical application of solar spectrum [33][34][35]. Through proper choice of both the semiconductor with respect to energy level alignment and CB/VB edge position, a type-II or Z-scheme heterostructure can be further constructed to improve the transport performance of photogenerated carrier [22,29,36,37].…”
Section: Introductionmentioning
confidence: 99%