A self-powered high performance UV-Vis-NIR broadband photodetector based on β-Bi₂O₃ nanoparticles through defect engineering

Abstract

The detection range of the Bi2O3 photodetector has been broadened to the NIR region through defect engineering.

W18O49 Nanowire Arrays for Plasmonic Photodetector with Electromediated Broadband Photoresponse

“…This can be attributed to the high concentration of defects in W 18 O 49 NWA. Because of the presence of defect states within the material, electrons are more readily captured, preventing the current from reaching saturation. , Additionally, upon the vis–NIR irradiation, the fast relaxation of hot electrons makes it difficult for the current to reach saturation under normal conditions. , Furthermore, the W 18 O 49 NWA contains defects that can capture photoinduced charge carriers and inhibit their relaxation process, which in turn affects the conductivity of the W 18 O 49 NWA after each switching cycle when the light is turned off …”

“…The results indicate that the W 18 O 49 NWA photodetector exhibits good stability and repeatability with consistent photocurrent responses observed across multiple light on/off cycles. From the single-cycle on/off switching test result (Figure d), it can be calculated that the rise time (τ r , the time for the photocurrent rising from 10% to 90% of the photocurrent maximum) of the W 18 O 49 NWA photodetector was ∼8.8 s, and the decay time (τ d , the time for the photocurrent decaying from 90% to 10% of the photocurrent maximum) was around 6.5 s. As an important parameter to evaluate the sensitivity of the device, the responsivity ( R ) for the W 18 O 49 NWA photodetector can be calculated by eq : , R = I light − I dark P in × A where P in is the power density of the incident light (365 nm, P in = 196 mW cm –2 ) and A is the effective area of the photodetector ( A = 0.25 cm 2 ). Based on the above equation, the R value of the W 18 O 49 NWA photodetector is calculated to be ∼48.9 mA W –1 .…”

“…This can be attributed to the high concentration of defects in W 18 O 49 NWA. Because of the presence of defect states within the material, electrons are more readily captured, preventing the current from reaching saturation 33,44. Additionally, upon the vis−NIR irradiation, the fast relaxation of hot electrons makes it difficult for the current to reach saturation under normal conditions 45,46.…”

Self-Powered Broadband Photodetectors Material Based on Co3O4–ZnO Heterojunction with Bottlebrush Nanostructure

“…The strategy building PN or Schottky junctions, which can create a built-in potential by the photovoltaic effect, has been used to fabricate self-powered photodetectors. − The performance broadband photodetectors require high responsivity, fast response speed, and high detectivity, which is the inverse of the minimum noise power. However, fulfilling these requirements is challenging and depends on the choice of photoactive materials and device architectures.…”

Multispectral and Circular Polarization‐Sensitive Carbon Dot‐Polydiacetylene Capacitive Photodetector

“…Multispectral photodetectors are widely used in optical communications, [1,2] security systems, [3,4] imaging, [5,6] household electronics, [7] molecular identification, [8] and other applications. [9][10][11] Traditional MSPs are based on semiconductor materials grown by epitaxial techniques which are generally not compatible with low-cost large-scale processing.…”