Effect of deposition time on structural, electrical, and optical properties of SnS thin films deposited by chemical bath deposition

Güneri, Emine; Ulutaş, C.; Kırmızıgül, F.; Altindemir, G.; Göde, Fatma; Gümüş, C.

doi:10.1016/j.apsusc.2010.07.104

Cited by 159 publications

(89 citation statements)

References 26 publications

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“…The decrease of optical band gap with the decrease of Zn/S molar ratio could be attributed to the structural and morphological change as well as the stoichiometric deviations in the film which gave rise to the formation of located states in the band gap region. Other possibilities to explain this change in optical band gap could be related to the increase in particle size and this is well known for colloidal semiconductors [34,35]. It should be emphasized that the film deposited from Zn/S ¼ 0.2 in the solution bath shows an optical band gap (E g ) of 3.68 eV, which closely agreed with other values previously reported for ZnS bulk [30].…”

Section: Optical Propertiessupporting

confidence: 82%

Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Arbi

Assaker

Gannouni

et al. 2015

Materials Science in Semiconductor Processing

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Section: Optical Propertiessupporting

confidence: 82%

Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Arbi

Assaker

Gannouni

et al. 2015

Materials Science in Semiconductor Processing

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“…It is found that the average grain size is increased from 14 to 29 nm with the increasing deposition time from 5 to 15 s and then it is decreased from 21 to 17 nm for the adsorption time from 20 to 25 s. This decrease of grain size can be attributed to decrease of attracting force between the crystals such as Van der Waals; this is due to prolonged existence in the solution [16]. Dislocation density (d) of the film can be calculated using the Eq.…”

Section: Experiments Proceduresmentioning

confidence: 81%

“…From the results of the texture coefficient calculation for (0 0 2) plane, it is found that the texture coefficient value is greater than 1, it indicates the good crystalline quality of the grown film. This represents that the number of grains oriented along this plane is more than the other planes [17]. Figure 2 shows the room temperature Raman spectrum of CuO thin film prepared at 15 s adsorption time.…”

Section: Experiments Proceduresmentioning

confidence: 98%

Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

Visalakshi

Kannan

Valanarasu³

et al. 2016

J Mater Sci: Mater Electron

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Deposition of CuO thin films onto glass substrates by SILAR technique changing the adsorption time is reported. Adsorption time dependent variation on structural, optical and electric properties of the films has been analyzed. X-ray diffraction (XRD) pattern of the films have confirmed the polycrystalline monoclinic structure with (002) preferred orientation. Intensity of the XRD peaks is found to increase with the increase of adsorption time. Crystallite size, lattice parameters, defect density and texture coefficient of the film have been calculated using the XRD data. Surface morphology studies of the films done by scanning electron microscopy showed uniform and continuous film with spherical particles. Optical absorption studies of the films have revealed that the optical band gap of the thin films is decreased with the increase of adsorption time and it lies between 2.12-1.91 eV. Hall Effect measurements of the films have shown that the obtained material has p-type conductivity and resistivity values are found to decrease with adsorption time. I-V property of the fabricated p-CuO/n-Si diode has been measured by illuminating the device with a halogen lamp of intensity 200 W and it has shown a maximum open circuit voltage (V oc ) 0.05 V and short-circuit current (I sc ) 0.25 9 10 -6 A.

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“…As a result, the broadness and reduction of XRD peaks intensity might originate from manganese-related defects and manganese segregation. The average grain size (D) was calculated using the Scherrer formula [20].…”

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of diluted magnetic $$\hbox {Ga}_{{1-x}}\hbox {Mn}_{{x}}$$ Ga 1 - x

et al. 2017

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A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. Abstract. We report on the structural and optical properties of Ga 1−x Mn x As-AlAs quantum wells (QWs) with x = 0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2θ, d and cell parameters.

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Effect of deposition time on structural, electrical, and optical properties of SnS thin films deposited by chemical bath deposition

Cited by 159 publications

References 26 publications

Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Experimental investigation of the effect of Zn/S molar ratios on the physical and electrochemical properties of ZnS thin films

Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

Structural and optical properties of diluted magnetic $$\hbox {Ga}_{{1-x}}\hbox {Mn}_{{x}}$$ Ga 1 - x

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