Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

Kim, Doo Soo; Park, Ji‐Hyeon; Shin, Beom Ki; Moon, Kyungsun; Son, Myoungwoo; Ham, Moon Ho; Lee, Woong; Myoung, Jae Min

doi:10.1016/j.apsusc.2012.07.082

Cited by 16 publications

(5 citation statements)

References 22 publications

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“…In order to investigate the chemical states, the O 1s spectra of the samples with different annealing temperature (Figure 1c-h) are deconvoluted into two peaks, which are centered at 530.6 and 532.1 eV. In the literature, a peak at the lower binding energies of 530-531 eV is generally attributed to the O 2− binding at lattice points of ZnO, while the peak at the higher binding energies (531-532 eV) is ascribed to oxygen vacancies [32][33][34][35][36][37][38]. We thus assign the peaks at 530.…”

Section: Resultsmentioning

confidence: 88%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

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In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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Section: Resultsmentioning

confidence: 88%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

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“…ZnO has a wide bandgap energy (∼3.3 eV) and has been studied in different forms such as powder [10] and thin film [11]. Several techniques can be used to make ZnO:Al thin film, such as DC or RF magnetron sputtering [12,13], electron beam evaporation [14], pulsed laser deposition [15], chemical vapor deposition [16], spray pyrolysis [17], and sol-gel processing [18]. Sol-gel is the most widely used method because of its easy and low-cost preparation [19].…”

Section: Introductionmentioning

confidence: 99%

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Sutanto

Durri

Wibowo

et al. 2016

Physics Research International

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Zinc oxide (ZnO) and aluminum doped zinc oxide (ZnO:Al) thin films have been deposited onto a glass substrate by sol-gel spray coating method at atmospheric pressure. X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometer have been used to characterize the films. XRD spectra indicated that all prepared thin films presented the wurtzite hexagonal structure. SEM images exhibited rootlike morphology on the surface of thin films and the shortest root diameter was about 0.219 μm. The UV-Vis absorption spectra exhibited the absorption edges that were slightly shifted to the lower wavelength. From this result, the incorporation of aluminum into the ZnO involved a slight increase in the optical band-gap of films. The optical bands of films were 3.102 eV, 3.115 eV, 3.118 eV, 3.115 eV, 3.109 eV, and 3.109 eV for ZnO, ZnO:Al 2%, ZnO:Al 4%, ZnO:Al 6%, ZnO:Al 8%, and ZnO:Al 10%, respectively. Increase of Al doping concentration in ZnO films contributed to the increase of their optical band-gap which can be explained by the Burstein-Moss effect.

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“…1. The strong (0 0 2) peak of ZnO indicates that the deposited films have a c-axis preferred orientation due to self-texturing phenomenon [19]. No Al 2 O 3 phase was detected in the XRD patterns.…”

Section: Resultsmentioning

confidence: 98%

Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Al-Doped Zinc Oxide Thin Films Deposited by Layer-by-Layer Method at Magnetron Sputtering

Дранчук

Євтушенко

Karpina

et al. 2015

SEMST

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Al-doped ZnO (AZO) thin films were deposited by magnetron sputtering layer-by-layer growth method on silicon and glass substrates at different substrate temperatures. The atomic force microscopy analysis shows that AZO films are very flat with average root-mean square roughness 2.3 nm. Energy dispersive X-ray spectroscopy analysis reveals that Al content in AZO films approx. 1 at. %. X-ray diffraction studies have shown that all aluminum doped ZnO films are polycrystalline ones having hexagonal wurtzite structure with c-axis oriented perpendicular to film plane (002). Optical

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Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

Cited by 16 publications

References 22 publications

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Rootlike Morphology of ZnO:Al Thin Film Deposited on Amorphous Glass Substrate by Sol-Gel Method

Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Al-Doped Zinc Oxide Thin Films Deposited by Layer-by-Layer Method at Magnetron Sputtering

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