Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Laatar, Fakher; Harizi, Afef; Smida, A.; Hassen, M.; Ezzaouia, Hatem

doi:10.1016/j.materresbull.2016.02.021

Cited by 19 publications

(4 citation statements)

References 37 publications

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“…After the gross contamination is removed, the type and amount of contaminants to which the surface is exposed must be controlled. CdSe thin films are usually deposited on commercial microscope glass slides/ fluorine-doped tin oxide (FTO) substrates [93] with a size of 75 × 25 × 1.35 mm, [129] 2 cm 2 : [130] These substrates are preliminarily cleaned in a detergent solution, such as deionized water for 30 min [93] or an HNO 3 solution for 24 h. [129] Then, they have cleaned again in an ultrasonic bath with acetone, ethanol, [131] xylenes for 10 min, [132] or 5 min. [130] This process ensures a clean surface, which is important for the creation of the nucleation centers needed for the thin film deposition.…”

Section: Substrate Cleaning and Preparationmentioning

confidence: 99%

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Cadmium Selenide Quantum Dots for Solar Cell Applications: A Review

Rahman

Karim

Alharbi

et al. 2021

Chemistry An Asian Journal

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Quantum dot-sensitized solar cells (QDSSCs) are significant energy-producing devices due to their remarkable capability to growing sunshine and produce many electrons/ holes pairs, easy manufacturing, and low cost. However, their power conversion efficiency (4%) is usually worse than that of dye-sensitized solar cells (� 12%); this is mainly due to their narrow absorption areas and the charge recombination happening at the quantum dot/electrolyte and TiO 2 /electrolyte interfaces. Thus, to raise the power conversion efficiency of QDSSC, new counter electrodes, working electrodes, sensitizers, and electrolytes are required. CdSe thin films have shown great potential for use in photodetectors, solar cells, biosensors, light-emitting diodes, and biomedical imaging systems. This article reviews the CdSe nanomaterials that have been recently used in QDSSCs as sensitizers. Their size, design, morphology, and density all noticeably influence the electron injection efficiency and light-harvesting capacity of these devices. A detailed overview of the development of QDSSCs is presented, including their basic principles, the synthesis methods for their CdSe quantum dots, and the device fabrication processes. Finally, the challenges and opportunities of realizing high-performance CdSe QDSSCs are discussed and some future directions are suggested.

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Section: Substrate Cleaning and Preparationmentioning

confidence: 99%

“…CdSe QD solutions are illuminated in normal and UV light [150] (Reproduced with permission). Nanoparticle XRD, SEM, TEM, UV, PL [89], [69], [87], [132], [92], [ research. The wide energy bandgap of single QDSSC is also a major concern, as it limits the absorption of all QDSSC films to a limited region.…”

Section: Summary and Challengesmentioning

confidence: 99%

Cadmium Selenide Quantum Dots for Solar Cell Applications: A Review

Rahman

Karim

Alharbi

et al. 2021

Chemistry An Asian Journal

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“…CdS and CdSe have a direct band gap of 2.42 eV and 1.70 eV, respectively [4][5][6]. Polycrystalline thin films of both can be deposited by several techniques such as chemical bath deposition (CBD) [7,8], electrodeposition [1,9,10], vacuum evaporation [11,12], molecular beam epitaxy [13,14], magnetron sputtering [15,16], among others [9,[17][18][19]. The physical techniques require complex equipment, which translates into high costs.…”

Section: Introductionmentioning

confidence: 99%

CdS/CdSe HETEROSTRUCTURES GROWN BY CHEMICAL TECHNIQUES ON FLEXIBLE PET/ITO SUBSTRATES

RODRÍGUEZ-ROSALES¹,

NIETO-ZEPEDA²,

QUIÑONES-GALVAN³

et al. 2020

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Undoped and Mn-doped CdS films, CdSe films and CdS:Mn/CdSe heterostructures were deposited by chemical techniques. Undoped and Mn-doped CdS films were grown onto flexible PET/ITO substrates by chemical bath deposition at different temperatures. CdSe thin films were synthesized following a two stages process. In the first stage, CdO2 precursor films, were synthesized by chemical bath deposition at different deposition time. In the second stage, the CdO2 precursor films were transformed into CdSe films by immersion in a Se ionic solution. CdS, CdS:Mn, CdSe and CdS/CdSe samples were characterized by high-resolution transmission electron microscopy, UV-vis, Raman and room temperature photoluminescence spectroscopies. The structural characterization indicates that CdS and CdSe films with hexagonal phase were obtained. CdSe films showed the LO Raman mode with three order phonon replicas, an indication of the excellent crystalline quality of the samples.

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“…1 The semiconductor films are obtained by the chemical reaction of a precursor in an aqueous solution that changes into a solid layer at the substrate surface. 2 Cadmium selenide (CdSe), lead sulfide (PbS), tin disulfide (SnS 2 ), zinc selenide (ZnSe), nickel sulfide (NiS), zinc oxide (ZnO), cadmium sulfide (CdS) and zinc sulfide (ZnS) [3][4][5][6][7][8] are some of these materials obtained by this technique. The applications of these films are versatile and can be used in many fields including electronics, photonics and energy conversion.…”

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confidence: 99%

Synthesis of ZnS Thin Films by Chemical Bath: From Room Temperature to 90°C

González-Chan

González-Panzo

Oliva

2017

J. Electrochem. Soc.

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A physicochemical analysis was performed on the solution used for synthetizing zinc sulfide (ZnS) films by chemical bath; such solution contained zinc chloride, potassium hydroxide, ammonium nitrate and thiourea as chemical reagents. Solubility curves and species distribution diagrams were used to obtain the best conditions for ZnS deposition in a wide range of bath temperatures between 25 and 90 • C. Solubility curves evidenced the necessity to adjust the thiourea concentration for each bath temperature in order to obtain enough amounts of sulfur ions needed for ZnS formation. The thiourea concentrations were fixed at 0.2 M (90 • C), 0.6 M (60 • C), 1.25 M (40 • C), and 2.25 M (25 • C) to get higher quality films. Characterization results of films deposited at the conditions described above showed the films to have a bandgap energy value between 3.65 and 3.72 eV, stoichiometry of [Zn]/[S] ≈1, and homogeneous and agglomerate-free surfaces, which make them proper for solar cells applications.

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Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Cited by 19 publications

References 37 publications

Cadmium Selenide Quantum Dots for Solar Cell Applications: A Review

Cadmium Selenide Quantum Dots for Solar Cell Applications: A Review

CdS/CdSe HETEROSTRUCTURES GROWN BY CHEMICAL TECHNIQUES ON FLEXIBLE PET/ITO SUBSTRATES

Synthesis of ZnS Thin Films by Chemical Bath: From Room Temperature to 90°C

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