Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Shin, Beom Ki; Lee, Tae Il; Kar, Jyoti Prakash; Lee, Min Jung; Park, Kang Il; Ahn, Kwangsu; Yeom, Keun Young; Cho, Joong Hwee; Myoung, Jae Min

doi:10.1016/j.mssp.2010.12.013

Cited by 15 publications

(1 citation statement)

References 17 publications

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“…Despite the reported advantages of RF-superimposed DC sputtering system, the combination of RF-power to a DC sputtering process increases a significant complexity to the system set-up and the difficulty in handling the arc events [13]. Recently, pulsed DC magnetron sputtering has attracted considerable attention because it demonstrates a higher deposition rate and better field-effect mobility than that of RF magnetron sputtering [6,14,15]. In particular, it can reduce arc events during sputtering in the frequency range of 20-350 kHz [16].…”

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confidence: 99%

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Liu

Huang

Lin

et al. 2019

Semicond. Sci. Technol.

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This study investigated the use of pulsed direct current (DC) magnetron sputtering for depositing indium-gallium-zinc oxide (IGZO) thin films that can serve as channel layers and fabricating high-performance thin-film transistors (TFTs). Unlike a typical radio-frequency (RF) sputtering system, a pulsed DC system can be operated using a modulated pulse frequency for increasing the deposition rate, reducing the surface roughness, and increasing plasma density for dense thinfilm deposition with reduced arc-induced structural defects at a specific sputtering power. In this study, pulse frequencies ranging from 170 to 350 kHz were modulated for obtaining IGZO thin films with higher surface flatness, carrier mobility, and material quality than those of IGZO films deposited using RF sputtering. The IGZO film fabricated at a pulse frequency of 350 kHz was used as a transistor channel layer in one of the fabricated TFTs; this TFT showed an advantageous field-effect mobility of 9.78 cm 2 V −1 s −1 , a subthreshold swing of 0.72 V/decade, an off current of 1.57 × 10 −11 A, and an on-off current ratio of 4.87 × 10 7 . These results revealed that pulsed DC sputtering is a promising technique for fabricating TFTs with excellent device characteristics.

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Section: Introductionmentioning

confidence: 99%

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Liu

Huang

Lin

et al. 2019

Semicond. Sci. Technol.

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Investigation of the Negative Ions in Ar/O₂ Plasma of Magnetron Sputtering Discharge with Al:Zn Target by Ion Mass Spectrometry

Pokorný

Mišina

Bulı́ř

et al. 2011

Plasma Processes & Polymers

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The magnetron sputtering discharge used to deposit aluminum‐doped zinc oxide was analyzed by energy‐resolved ion mass spectrometry. The flux of negative ions was measured at three radial positions in the plane of the substrate holder. The oxygen flow $\phi _{{\rm O}_{2} } $ was varied from 0 to 17 sccm to investigate the discharge in all operation modes, i.e., metallic, transition, and oxide mode of sputtering. The existence of negative ions was determined from the energy spectra. Main attention was devoted to the investigation of O−, ${\rm O}_{2}^{{-} } $, AlO−, ${\rm AlO}_{2}^{{-} } $, ZnO−, ${\rm ZnO}_{2}^{{-} } $, and ${\rm AlO}_{3}^{{-} } $ negative ions and correlations of their intensities in the energy spectrum with discharge parameters (cathode voltage, magnetron power, and gas pressure). It was found that (i) intensities of negative ions exhibit maxima in the vicinity of transition between the metallic and transition mode of sputtering and (ii) in the oxide mode intensities of these ions are saturated.

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Synergistic effect of bimetal ions (Ce, Pb) incorporation on optical, structural, and sensory activity of ZnO nanocrystals

Kannadasan

Shanmugam

Cholan

et al. 2014

J Solid State Electrochem

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Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Cited by 15 publications

References 17 publications

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Investigation of the Negative Ions in Ar/O₂ Plasma of Magnetron Sputtering Discharge with Al:Zn Target by Ion Mass Spectrometry

Synergistic effect of bimetal ions (Ce, Pb) incorporation on optical, structural, and sensory activity of ZnO nanocrystals

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Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Cited by 15 publications

References 17 publications

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Investigation of the Negative Ions in Ar/O2 Plasma of Magnetron Sputtering Discharge with Al:Zn Target by Ion Mass Spectrometry

Synergistic effect of bimetal ions (Ce, Pb) incorporation on optical, structural, and sensory activity of ZnO nanocrystals

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Investigation of the Negative Ions in Ar/O₂ Plasma of Magnetron Sputtering Discharge with Al:Zn Target by Ion Mass Spectrometry