Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Liu, Weisheng; Huang, Chien-Lung; Lin, Yi-Hung; Hsu, Chih‐Hao; Chu, Yi-Ming

doi:10.1088/1361-6641/ab592a

Cited by 14 publications

(7 citation statements)

References 43 publications

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“…In addition, the ionization of O 2 vacancies to form double ionized Vo (Vo 2+ ) also led to an increased electron concentration. Therefore, V TH in the IGZO TFT devices shifted to the negative direction, as observed in the NBS reliability measurement [45].…”

Section: Tftsupporting

confidence: 56%

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Liu

Hsu

Jiang

et al. 2021

Semicond. Sci. Technol.

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In this study, an Ar/O2 plasma mixture treatment with different proportions of O2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm2 V−1 s−1, a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10−11 A, and an I ON/I OFF current ratio of 7.55 × 105. To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm2 V−1 s−1, SS of 0.7 V/decade, I OFF current of 1.04 × 10−11 A, and an I ON/I OFF current ratio of 9.93 × 106. In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

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Section: Tftsupporting

confidence: 56%

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Liu

Hsu

Jiang

et al. 2021

Semicond. Sci. Technol.

Self Cite

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“…In the visible region, the average transmittance of all thin films is above 80%. a-IGZO thin films have a high transmittance in the visible region because they have a high forbidden bandwidth (about 3.5 eV) when both our study and literature results are examined [34,35]. This high forbidden bandwidth gives it high transparency in the visible region.…”

Section: Optical Characterizationsupporting

confidence: 47%

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

Kurtuluş,

Asar,

Özçelik

2023

Phys. Scr.

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The effects of Ar sputtering deposition pressure on the optical, structural, morphological, and electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin films, which have amorphous structures determined by grazing incidence X-Ray diffraction, contained In, Ga, Zn, and O confirmed by secondary ion mass spectrometry method. Additionally, when the thicknesses of the deposited thin films are examined, it was seen that the profilometer measurement results of the crater formed by secondary ion mass spectrometer and scanning electron microscope measurement results are nearly similar, and it is approximately 100 nm. The surface roughness, obtained from Atomic Force Microscopy results, show that decreased up to a particular value with the increase of the working pressure, and then the surface roughness increased. The optical band gaps of the films were obtained in the range of 3.50 eV-3.58 eV via Tauc relation by using the Ultraviolet-Visible measurements carried out in the wavelength range of 200 nm-1100 nm. It was seen that the optical band gap was decreased with the increase in Ar pressure. The electrical properties of InGaZnO thin film-based Schottky diodes, such as the barrier height, ideality factor, saturation current, series resistance, and shunt resistance, have also been studied comprehensively. The electrical results showed that diode properties change with increasing deposition pressure.

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“…In addition, the ionization of the oxygen vacancy formed a double-ionized V o (V o 2+ ) also produces similar changes as described above. [41,42] These explanations seem to draw evidence from previous XPS results. As shown in Figure 2j, the proportion value of (V o +M-OH) is the smallest in InZn 50% O (32.7%), and the stability is even better relative to the device with a large value.…”

Section: Resultsmentioning

confidence: 75%

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

et al. 2023

Adv Elect Materials

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Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (µFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

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Improving device characteristics of IGZO thin-film transistors by using pulsed DC magnetron sputtering deposition

Cited by 14 publications

References 43 publications

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

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