Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films

Ponon, Nikhil; Appleby, Daniel J. R.; Arac, Erhan; King, Peter; Ganti, Srinivas; Kwa, Kelvin S. K.; O'Neill, AG

doi:10.1016/j.tsf.2015.02.009

Cited by 166 publications

(99 citation statements)

References 31 publications

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“…In the same way, a thorough examination of the background shows that it seems relatively structured in the wave numbers ranging from 300 to 400 cm −1 and 450 to 600 cm −1 . This tendency is confirmed on Raman spectrum (c) in Figure 6 which corresponds to the Ti film heated at 600 • C and exposed to (Ar-33%N 2 -1%H 2 ) plasma for 3 h. Both regions of the spectrum from 300 to 400 cm −1 and 450 to 600 cm −1 are swelled, especially around 570 cm −1 which corresponds to the most intense optic phonon modes (LO and TO) of TiN lattice vibrations [1,33]. Normally, the high symmetry of B1-structured materials of NaCl-type prevents it from showing a first order Raman spectrum.…”

Section: Formation Of Tio 2 and Tin Compoundssupporting

confidence: 52%

“…In contrast with C 54 TiSi 2 , the TiN crystallites do not exhibit any preferred orientation. In literature, films of TiN are usually obtained by reactive sputtering in (Ar-N 2 ) gas mixtures [1,3,16,21]. The films exhibit a (111) and (200) orientation at low and high nitrogen content in gas mixtures, respectively [1].…”

Section: Formation Of Tin Phasementioning

confidence: 99%

“…The very attractive physical and chemical properties of titanium nitrides (TiN) make them very efficient for a great number of applications [1][2][3][4][5][6][7][8][9][10][11]. TiN exhibits a high melting point of 3220 K greater than those of ceramic materials such as Al 2 O 3 or Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

“…TiN films are also good diffusion barriers for metal interconnects. Moreover, owing to their very low resistivity of 30 µΩ·cm, TiN films can replace silicon as gate electrodes in metal oxide semiconductor (MOS) devices as well as upper electrodes in Schottky diodes [1].…”

Section: Introductionmentioning

confidence: 99%

“…Titanium nitrides are synthesized by various processes such as DC or RF magnetron sputtering [1,3,4,16,21,22], pulsed laser irradiation [23] . .…”

Section: Introductionmentioning

confidence: 99%

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Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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Section: Formation Of Tio 2 and Tin Compoundssupporting

confidence: 52%

Section: Formation Of Tin Phasementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Titanium nitrides are synthesized by various processes such as DC or RF magnetron sputtering [1,3,4,16,21,22], pulsed laser irradiation [23] . .…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Autonomously Self‐Reporting Hard Coatings: Tracking the Temporal Oxidation Behavior of TiN by In Situ Sheet Resistance Measurements

Stelzer

Momma

Schneider

2020

Adv Funct Materials

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Monitoring the structural health and integrity of coated components is of vital importance to increase their lifetime and the overall sustainability of the targeted applications. Here, the temporal oxidation behavior of TiN thin films is tracked using in situ sheet resistance measurements. Based on correlative film morphology, structure, and local composition data, it is evident that observed resistance changes are caused by oxidation of TiN. Thickness measurements of the remaining TiN under the oxide layer are in very good agreement with thicknesses deduced from in situ sheet resistance measurements. Hence, the in situ measured sheet resistance is an autonomous self‐reporting property useful for tracking the temporal oxidation behavior of TiN coatings.

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AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an improved Schottky barrier height (SBH) of ∼1.1 eV, which is larger than the Schottky contacts formed by the other reported TiN‐based stacks and by most of Ni/Au‐free materials. The improvement of SBH is due to the increase of metal work function either by the incorporation of oxygen in sputtered TiN or by using a high N2/Ar ratio during the sputtering process. Although the HEMTs with TiN gate show comparable DC output and transfer characteristics compared to devices with Ni/Au gate, they exhibit enhanced OFF‐state breakdown voltages (BVgd) of ∼48–58 V. This is consistent with the observation of an order of magnitude lower reverse gate leakage current and is also well agreed by the enhanced SBH of the sputtered TiN as compared to the Ni/Au gate. With reference to the HEMTs with Ni/Au gate, a slight increase of dynamic/static on‐resistances (Rds[ON]) ratio (∼8%) was observed in the sputtered TiN gate HEMTs.

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Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films

Cited by 166 publications

References 31 publications

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Autonomously Self‐Reporting Hard Coatings: Tracking the Temporal Oxidation Behavior of TiN by In Situ Sheet Resistance Measurements

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

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