Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

Chowdhury, Shahariar; Shahahmadi, Seyed Ahmad; Chelvanathan, Puvaneswaran; Tiong, Sieh Kiong; Amin, Nowshad; Techato, Kuaanan; Nuthammachot, Narissara; Chowdhury, Towhid H.; Suklueng, Montri

doi:10.1016/j.rinp.2019.102839

Cited by 153 publications

(84 citation statements)

References 52 publications

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“…[ 47 ] The shallow defects (≈10 10 –10 11 cm −3 ) and deep defects (≈10 14 –10 16 cm −3 ) are usually dominated in a conventional solar cell. [ 30 ] Shallow defects may not be detrimental to PV performance as the trapped carriers may come out easily from these defect states. On the other hand, deep defects act as the undesired recombination centers and trap both types of carriers.…”

Section: Resultsmentioning

confidence: 99%

“…MAPbI 3 based PSC devices exhibit 0.65 and 0.76 eV deep defect levels below the conduction band edge, no matter what processing method is used. [ 30 ] However, there is no such study available regarding deep defect levels in Cs 2 AuBiCl 6 absorber material. Therefore, we assumed the same deep defect states as in MAPbI 3 while evaluating the photovoltaic response.…”

Section: Resultsmentioning

confidence: 99%

“…In the steady‐state condition, the carrier lifetime of electron and hole, τ n and τ p ; and interface recombination speed are related as

τ_{normaln} = \frac{1}{σ_{normaln} V_{th} false(N_{t} - n_{r} false)}

τ_{normalp} = \frac{1}{σ_{normalp} V_{th} n_{normalr}}

V_{normalIR} = σ V_{th} N_{normalIR}

where,

σ_{normaln} normaland σ_{p}

are electron and hole capture cross ‐ sections, respectively, whereas V th is the thermal velocity of the corresponding carrier;

N_{normalt} normaland n_{normalr}

are total (both occupied and unoccupied) and occupied defect/trap density, respectively. [ 29,30 ] The total interface defect density is represented as N IR . Here, carrier lifetime decreases with increasing defect density and thus, the carrier diffusion length ( L ) also decreases, leaving a detrimental effect on the PV performance of the solar cell.…”

Section: Introductionmentioning

confidence: 99%

“…The Shockley–Read–Hall (SRH) recombination provides more insight in understanding the influence of defect density on PV performance and is expressed as

R^{normalSRH} = \frac{v_{normalth} σ_{normaln} σ_{normalp} N_{normalT} false[n p - {n_{i}}^{2} false]}{σ_{normalp} false[p + p_{1} false] + σ_{normaln} false[n + n_{1} false]}

. [ 30 ] Here, v th is electron thermal velocity, n i is intrinsic number density; p and n are equilibrium hole and electron concentrations, p 1 and n 1 are hole and electron concentration in trap centers and valence band, respectively, N T defect density (per volume).…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Kale

Chaurasiya

Dixit

2021

Advcd Theory and Sims

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Cs2AuBiCl6 is considered to be a potential lead‐free double perovskite alternative for perovskite solar cells. Its electronic and optical properties are investigated using density functional theory. The electronic properties of Cs2AuBiCl6 material ensure a bandgap of 1.40 eV (without considering SOC) and 1.12 eV (with SOC) using mBJ exchange‐correlation functional, close to the optimal bandgap for solar cell application as per the Shockley–Queisser limit. Optical properties suggest a high absorption coefficient ≈105 cm−1 with low reflectance, making it the optimal absorber material. Furthermore, the photovoltaic performance of Cs2AuBiCl6 based single‐junction transparent conducting oxide (TCO)/IDL1/Cs2AuBiCl6/IDL2/Cu2O solar cell is investigated using SCAPS‐1D device simulation program. The impact of electron affinity, thickness, carrier concentration, defect density, and interface defect density is examined using interface defect layer (IDL) on the photovoltaic performance. The maximum photoconversion efficiency (PCE) of ≈22.18% is noticed for optimized material's parameters. These studies on TCO/IDL1/Cs2AuBiCl6/IDL2/Cu2O solar cell will provide guidelines for designing and developing an efficient lead‐free perovskite‐based solar cell as an alternative to conventional halide perovskite materials based solar cell.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…In the steady‐state condition, the carrier lifetime of electron and hole, τ n and τ p ; and interface recombination speed are related as

τ_{normaln} = \frac{1}{σ_{normaln} V_{th} false(N_{t} - n_{r} false)}

τ_{normalp} = \frac{1}{σ_{normalp} V_{th} n_{normalr}}

V_{normalIR} = σ V_{th} N_{normalIR}

where,

σ_{normaln} normaland σ_{p}

are electron and hole capture cross ‐ sections, respectively, whereas V th is the thermal velocity of the corresponding carrier;

N_{normalt} normaland n_{normalr}

Section: Introductionmentioning

confidence: 99%

“…The Shockley–Read–Hall (SRH) recombination provides more insight in understanding the influence of defect density on PV performance and is expressed as

R^{normalSRH} = \frac{v_{normalth} σ_{normaln} σ_{normalp} N_{normalT} false[n p - {n_{i}}^{2} false]}{σ_{normalp} false[p + p_{1} false] + σ_{normaln} false[n + n_{1} false]}

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Kale

Chaurasiya

Dixit

2021

Advcd Theory and Sims

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“…The quality of the perovskite films such as crystallinity and morphology has shown a strong influence on the performance of the photovoltaic devices. Several parameters can improve the crystallinity and the morphology of the films, including solvent engineering [14,15], deposition methods [16][17][18], thermal annealing [19,20], different architectures [21,22], optimization of the electron transport layer (ETL) and hole transport layer (HTL) [23][24][25], synthesis methods [26] and the precursors concentration [11]. It has been demonstrated that the microstructure and the crystallinity of the perovskite material can considerably influence the overall performance of the photovoltaic device.…”

Section: Introductionmentioning

confidence: 99%

Effect of solvents and annealing treatment on the properties of the methylammonium lead tribromide perovskite thin films

Mhamdi

Mehdi

Bouazizi

2021

J Mater Sci: Mater Electron

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Solution-processed hybrid organic-inorganic perovskites from organoammonium halide and lead halide precursors form effective active layers for optoelectronics devices. The solvent plays a decisive factor on the preparation of active layer for perovskite application. In this report, the properties of methylammonium lead tribromide (MAPbBr 3) thin films were studied using various solvents. The solvents used were dimethylformamide (DMF), dimethyl sulfoxide (DMSO), a mixture of DMF ? IPA (Isopropanol). The photoluminescence and absorption spectra show a good solubility of the perovskite content in the mixed solvent than that with DMF or DMSO which is attributed to the good crystallization of content in the film. Furthermore, the effect of annealing treatment on the structural and optical properties of MAPbBr3 thin films prepared with DMF ? IPA was investigated. The MAPbB 3 film annealed at 100°C has considerably improved the dissociation of the charges resulting from the good interaction of the solvent with the perovskite material and the good perovskite film quality.

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Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆ Based Double Perovskite Solar Cells

Meng,

Elumalai,

Mehdizadeh‐Rad

et al. 2023

Advcd Theory and Sims

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Perovskite solar cells, a third‐generation photovoltaic technology, have recently emerged as a game‐changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead‐free perovskite solar cells with continuously improving efficiency for long‐term development. Recently, materials researchers have discovered a lead‐free double perovskite solar cell material, Cs2InBiBr6 with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6‐based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott‐Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6 as a lead‐free double perovskite solar cell absorber layer.

show abstract

Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

Cited by 153 publications

References 52 publications

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Effect of solvents and annealing treatment on the properties of the methylammonium lead tribromide perovskite thin films

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆ Based Double Perovskite Solar Cells

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Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

Cited by 153 publications

References 52 publications

Inorganic Lead‐Free Cs2AuBiCl6 Perovskite Absorber and Cu2O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Lead‐Free Cs2AuBiCl6 Perovskite Absorber and Cu2O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Effect of solvents and annealing treatment on the properties of the methylammonium lead tribromide perovskite thin films

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells

Contact Info

Product

Resources

About

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆ Based Double Perovskite Solar Cells