Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs₂InBiBr₆ Based Double Perovskite Solar Cells

Abstract

Perovskite solar cells, a third‐generation photovoltaic technology, have recently emerged as a game‐changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead‐free perovskite solar cells with continuously improving efficiency for long‐term development. Recently, materials researchers have discovered a lead‐free double perovskite solar cell material, Cs2InBiBr6 with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6‐based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott‐Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6 as a lead‐free double perovskite solar cell absorber layer.

Optimization and Performance Analysis of Inorganic Lead-Free CsSnBr3 Perovskite Solar Cells Using Diverse Electron Transport Materials

“…A higher flat band potential results in a reduced energy barrier for carrier transfer at the interface. Consequently, a lower voltage is needed to facilitate the transportation of charge carriers across the interface . In simpler terms, a device with the greatest V bi will yield the highest V oc .…”

“…Consequently, a lower voltage is needed to facilitate the transportation of charge carriers across the interface. 45 In simpler terms, a device with the greatest V bi will yield the highest V oc . These findings align with the simulated performance results of the device using various ETLs.…”

Advancements in Photovoltaic Cell Materials: Silicon, Organic, and Perovskite Solar Cells

“…Their findings provide crucial insights into the suppression of degradation and the enhancement of stability in perovskite solar cells, guiding the design of efficient and durable solar energy devices. Meng et al [110] present a significant advancement in third-generation photovoltaic technology, focusing on the development of lead-free perovskite solar cells. Addressing environmental and health concerns associated with lead (Pb), the authors introduce a novel lead-free double perovskite material, Cs2InBiBr6, which is notable for its small direct bandgap of 1.27 eV and excellent thermodynamic and mechanical stability.…”

“…The recent accomplishments section focus on groundbreaking research and technological improvements. Meng et al [110] present a significant advancement in third-generation photovoltaic technology, focusing on the development of lead-free perovskite solar cells. Addressing environmental and health concerns associated with lead (Pb), the authors introduce a novel lead-free double perovskite material, Cs 2 InBiBr 6 , which is notable for its small direct bandgap of 1.27 eV and excellent thermodynamic and mechanical stability.…”