Effect of CuO on the sintering temperature and piezoelectric properties of MnO2-doped 0.75Pb(Zr0.47Ti0.53)O3–0.25Pb(Zn1/3Nb2/3)O3 ceramics

Nam, Chan Hee; Park, Hwi Yeol; Seo, In Tae; Choi, Jae Hong; Nahm, Sahn; Lee, Hyeung Gyu

doi:10.1016/j.jallcom.2010.12.163

Cited by 34 publications

(11 citation statements)

References 23 publications

(18 reference statements)

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“…Moreover, with increasing frequency, the permittivity of the ferroelectric phase decreases and the peak temperature of 269.3°C at 1 kHz slightly shifts toward a higher value of 270.2°C at 100 kHz, indicating that the PZ 0.48 T 0.52 -PZNN ceramic is a relaxor. 24,25 For use in piezoelectric multilayer devices, piezoelectric ceramics are required to be sintered at temperatures below 960°C, as the melting temperature of the Ag electrode used in multilayer devices is 961°C. Figure 8(a) shows the relative density, d 33 , e T 33 /e o , k p , and Q m values of the CuO-added PZ 0.48 T 0.52 -PZNN ceramic sintered at 900°C for 2 h. The PZ 0.48 T 0.52 -PZNN ceramic without the CuO additive could not be sintered at 900°C.…”

Section: Resultsmentioning

confidence: 99%

Piezoelectric Ceramics for Use in Multilayer Actuators and Energy Harvesters

Hur¹,

Seo

Kim

et al. 2014

J. Am. Ceram. Soc.

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/e o value upon heating the specimen at 150°C for 4 h. In an effort to reduce the sintering temperature, CuO was used as an additive for the ceramic. As a result, the CuO-added PZ 0.48 T 0.52 -PZNN ceramic was well sintered at 900°C. In particular, the 1.0 mol% CuO-added PZ 0.48 T 0.52 -PZNN ceramic exhibited a large d 33 value of 554 pC/N and a small e T 33 /e o value of 1620, making it highly suitable for use in multilayer actuators and energy harvesters.

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Section: Resultsmentioning

confidence: 99%

Piezoelectric Ceramics for Use in Multilayer Actuators and Energy Harvesters

Hur¹,

Seo

Kim

et al. 2014

J. Am. Ceram. Soc.

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“…Many studies were held for lower temperature sintering process [4][5][6]. This multi-layered structure was possible by using low sintering temperature by material composition such as addition of CuO [7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Study on cuo doping effect on 0.69PZT-0.31PZNN for multi-layer piezoelectric energy harvesting system

Song

Woo

Ahn

et al. 2014

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction M

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In this study, we have investigated CuO doping effect on PZT-PZNN thick film for lower temperature sintering of multi-layer structure energy harvesting system. We prepared 0.69PZT-0.31PZNN powder, slurry, and green sheet to manufacture thick film ceramics with different doping amount of CuO. Various amount of CuO (0, 1, 2 and 3 mol%) were inserted into piezoelectric material composition of 0.69Pb(Zr 0.47 Ti 0.53 )O 3 -0.31Pb{(Ni 0.6 Zn 0.4 ) 1/3 Nb 2/3 }O 3 . Laminated thick films with thickness of 0.310 mm were sintered at 900°C. Microstructures were investigated by using SEM and XRD. Also, dielectric property of sintered samples was measured by using d 33 meter. As results, dielectric permittivity increases as CuO doping amount increases, which led to decrease in resistance and increase in capacitance value. CuO doping amount of 2 mol % was found to be the optimized point with the highest d 33 value. This was explained by SEM images. The SEM images showed the increasing grain size as the CuO doping amount increase, and as the doping amount was 2 mol % or higher, secondary phase was observed in XRD. After measuring and analyzing the CuO doped samples, 2 mol% CuO doped PZT-PZNN thick film was placed on a SUS301 substrate to perform as a unimorph cantilever type energy harvesting system. First, the resonance frequency was observed in 39 Hz with 10.4V. At the resonance frequency, the impedance matching was found at the 2 M Ω, which the output power was calculated as 8 μW. This output power was then calculated as 0.267 mW/cm 3 .

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“…The challenges for fabrication of functional PZT/LTCC microdevices are formulating piezoelectric compositions which can be integrated/co‐fired with LTCC packaging materials and developing compatible processing methods to build the co‐fired multilayer structures with minimal defects . Previously, low fire PZT‐based piezoelectric ceramics have been studied with the aim of fabricating multilayer devices co‐fired with either LTCC materials and/or low melting temperature electrodes . Attempts have also been made to characterize dielectric and piezoelectric properties of PZT thick films fired on LTCC substrates .…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11] Previously, low fire PZT-based piezoelectric ceramics have been studied with the aim of fabricating multilayer devices co-fired with either LTCC materials and/ or low melting temperature electrodes. [12][13][14] Attempts have also been made to characterize dielectric and piezoelectric properties of PZT thick films fired on LTCC substrates. [15][16][17] However, producing PZT/LTCC multilayer ceramics for microdevice fabrication with high piezoelectric properties, high yield, and suitable reliability is a challenging task where technological obstacles still exist.…”

Section: Introductionmentioning

confidence: 99%

Sintering Behavior, Properties, and Applications of Co‐Fired Piezoelectric/Low Temperature Co‐Fired Ceramic (PZT‐SKN/LTCC) Multilayer Ceramics

Zhang

Eitel

2012

Int J Applied Ceramic Tech

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Materials and processing conditions have been developed allowing co‐firing of fluxed PZT‐SKN materials with commercial low temperature co‐fired ceramic (LTCC) tapes. Previously, Pb(Zr0.53, Ti0.47)O3–Sr(K0.25, Nb0.75)O3 (PZT‐SKN) ceramics fluxed with 1 wt% LiBiO2 and 1 wt% CuO addition were shown to sinter to high density at 900°C for 1 h, with a large d33 piezoelectric coefficient of ~415 pm/V. Currently, the master sintering curve (MSC) approach has been used to study the densification behaviors of fluxed PZT‐SKN and LTCC tapes. Different sintering mechanisms for fluxed PZT‐SKN ceramics and LTCC materials are confirmed by analyzing the apparent activation energy (Qa). Using knowledge gained from MSC results, an optimized sintering profile was developed. Multilayer PZT‐SKN/HL2000 (HeraLock™ Tape, Heraeus) stacks co‐fired at 900°C for 0.5 h maintain large piezoelectric coefficient (high field d33 > 340 pm/V). EDS analysis reveal limited interdiffusion of Pb from PZT‐SKN layers in LTCC and the appearance of Al, Ca, and Si in the PZT‐SKN near the PZT‐SKN/LTCC interface. Further, elemental interdiffusion was not detected at the center of piezoelectric layer in PZT‐SKN/LTCC multilayer ceramics and no subsequent reduction in piezoelectric coefficient d33 was observed. Finally, a piezoelectric microbalance with mass sensitivity of 150 kHz/mg was fabricated using the materials and methods developed.

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Effect of CuO on the sintering temperature and piezoelectric properties of MnO2-doped 0.75Pb(Zr0.47Ti0.53)O3–0.25Pb(Zn1/3Nb2/3)O3 ceramics

Cited by 34 publications

References 23 publications

Piezoelectric Ceramics for Use in Multilayer Actuators and Energy Harvesters

Piezoelectric Ceramics for Use in Multilayer Actuators and Energy Harvesters

Study on cuo doping effect on 0.69PZT-0.31PZNN for multi-layer piezoelectric energy harvesting system

Sintering Behavior, Properties, and Applications of Co‐Fired Piezoelectric/Low Temperature Co‐Fired Ceramic (PZT‐SKN/LTCC) Multilayer Ceramics

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