Effect of [Cu]/[In] ratio on properties of CuInS2 thin films prepared by successive ionic layer absorption and reaction method

Preparation and characterisation of thickness dependent nano-structured ZnS thin films by sol–gel technique

“…Since the atoms in the poor crystallized area are disordered, there are a large number of defects due to incomplete atomic bonding. After trapping the mobile carriers, the traps become electrically charged, creating a potential energy barrier which impedes the motion of carriers from one crystallite to another, thereby reducing their carrier concentration [21,32]. It can be concluded that poor crystallinity resulted in lower carrier concentration in this study.…”

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

“…Shi et al [291] synthesized CuInS 2 thin films on glass substrate at room temperature and heat-treated under Ar atmosphere at 773 K for 1 h. The CuCl 2 and InCl 3 mixed solutions with different ionic ratios ([Cu]/[In]) were used as cation precursor with Na 2 S as the anion precursor. The effect of the [Cu]/[In] ratio in precursor solution on the properties of CuInS 2 thin films was investigated.…”

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

“…CuInS 2 (CIS), fi lms have been grown from mixed copper(II) chloride, indium(III) chloride cation precursor, and sodium sulfi de anion precursor solutions. 121,122 XPS and XRD analyses revealed that, when the copper/indium concentration ratio in the solution was 1.25, a stoichiometric CIS fi lm could be grown. The electrical parameters obtained with different copper/indium concentration ratios have been investigated.…”

“…The electrical parameters obtained with different copper/indium concentration ratios have been investigated. 121 Copper(II) chloride, indium(III) chloride, and sodium selenosulfi te were applied in separate growth cycles to obtain CuInSe 2 chalcopyrite fi lms. After annealing at 400 ° C, the CuSe XRD refl ections disappeared and the reaction leading to the formation of CuInSe 2 was complete.…”