2017
DOI: 10.1088/1757-899x/202/1/012049
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Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

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Cited by 7 publications
(2 citation statements)
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References 23 publications
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“…Zinc oxide (ZnO) is a II-VI semiconductor with wide direct band gap energy (3.37 eV) at room temperature, that is suitable for short wavelength optoelectronic applications and it has a large exciton binding energy (60 meV). Due to its properties like low cost, non-toxicity, abundance in nature, suitability to doping, ZnO has got wide device applications in different areas such as ultraviolet light-emitters, gas sensors, piezoelectric transducers, and solar cells [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO) is a II-VI semiconductor with wide direct band gap energy (3.37 eV) at room temperature, that is suitable for short wavelength optoelectronic applications and it has a large exciton binding energy (60 meV). Due to its properties like low cost, non-toxicity, abundance in nature, suitability to doping, ZnO has got wide device applications in different areas such as ultraviolet light-emitters, gas sensors, piezoelectric transducers, and solar cells [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…20 These distinguishing characteristics support this material's suitability for many fascinating applications such as photovoltaic, solar energy, luminescent, light-emitting, spintronic devices, UV light emitters, cancer therapies, antibacterial activity. [21][22][23][24][25][26][27][28] On the other hand, synthesis strategies have dominant impacts on the ZnO's physical properties. There are several methods to synthesize metal oxide nanostructures including coprecipitation, sol-gel method, hydrothermal, spray pyrolysis, sonochemical, chemical vapor deposition.…”
mentioning
confidence: 99%