Effect of crystal structure on the Young’s modulus of GaP nanowires

Alekseev, P. A.; Borodin, Bogdan R.; Geydt, Pavel; Khayrudinov, Vladislav; Bespalova, Kristina; Kirilenko, D. A.; Reznik, R. R.; Нащекин, А. В.; Haggrén, Tuomas; Lähderanta, E.; Cirlin, G. É.; Lipsanen, Harri; Dunaevskiy, M. S.

doi:10.1088/1361-6528/ac0ac7

Cited by 4 publications

(2 citation statements)

References 47 publications

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“…Another factor is attributed to the competition between the nucleation rate at the Pd-Ga droplet and at the substrate surface; when nucleation at the substrate surface dominates, parasitic GaP growth in the form of 2D layers, agglomerated particles, and/or 3D islands occurs. This substrate surface growth may hinder NW growth by changing the regular 〈111〉 growth directions to unfavourable new growth directions [52][53][54].…”

Section: Effect Of Nw Growth Parametersmentioning

confidence: 99%

Branched-gallium phosphide nanowires seeded by palladium nanoparticles

et al. 2023

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Palladium nanoparticles were produced by a chemical reagent-free and versatile method called spark ablation with control over particle size and density. These nanoparticles were used as catalytic seed particles for gallium phosphide nanowire growth by metalorganic vapour-phase epitaxy. Controlled growth of GaP nanowires using significantly small Pd nanoparticles between 10 and 40 nm diameter was achieved by varying several growth parameters. Low V/III ratios below 2.0 promote higher Ga incorporation into the Pd nanoparticles. Moderate growth temperatures under 600C avoid kinking and undesirable GaP surface growth. In addition, a second batch of palladium nanoparticles of concentration up to 1000 particles/m2 was deposited onto the GaP nanowires. Subsequently, three-dimensional nanostructures evolved, with branches growing along the surface of the GaP nanowires. The GaP nanowires revealed a zinc blende structure with multiple twinning and a PdGa phase at the tip of the nanowires and branches.

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Section: Effect Of Nw Growth Parametersmentioning

confidence: 99%

Branched-gallium phosphide nanowires seeded by palladium nanoparticles

et al. 2023

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“…For GaP NWs grown by the MOVPE (ZB with high density of twinning defects) and MBE methods (WZ with high density of SFs), Prokhor A Alekseev et al reported a similar Young’s modulus (155 ± 20 GPa and 157 ± 20 GPa) or both types of NWs with the AFM method. Thus, they concluded that crystal structure (WZ/ZB) and crystal defects on the Young’s modulus of GaP NWs can be negligible [ 128 ].…”

Section: Structural–dependent–physical Properties Of Iii–v Nwsmentioning

confidence: 99%

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures

Zhang

Cheng

et al. 2022

Materials

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III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

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Polarized Raman spectroscopy of GaP nanowires under 5% elastic strain

Sharov

Fedorov²,

Alekseev

et al. 2021

J. Phys.: Conf. Ser.

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Optical porperties of highly-strained gallium phosphide nanowires were investigated via polarized Raman spectroscopy. 5% elastic strain was created in individual nanowire lying on nickel substrate by the means of atomic force microscopy. Micro-Raman mapping along the nanowire cross section in parallel and perpendicular polarization was carried out. Strain-induced effects on transverse optical mode position and shape were analyzed. The pronounced splitting of the mode due to high level of strain was observed. It was found that in parallel polarization the mode shape is sensitive to the position of the pumping spot which can be attributed to enhanced light-nanowire coupling effects.

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Effect of crystal structure on the Young’s modulus of GaP nanowires

Cited by 4 publications

References 47 publications

Branched-gallium phosphide nanowires seeded by palladium nanoparticles

Branched-gallium phosphide nanowires seeded by palladium nanoparticles

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures

Polarized Raman spectroscopy of GaP nanowires under 5% elastic strain

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