Effect of cooling ambient on electrical activation of dopants in MOVPE of InP

Cole, Sandhya; Evans, Julian; Harlow, M.J.; Nelson, A. H.; Wong, S.S.

doi:10.1049/el:19880633

Cited by 49 publications

(9 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the basis of results previously discussed for InP:Zn [67,68], it is reasonable to conclude that the AsH3 (or TBAs) is the source of the hydrogen in these layers. However, we have also obtained passivation of GaAs:C using trimethylarsine (TMAs) instead of AsH 3.…”

Section: The Hydrogen Passivation Of Carbonmentioning

confidence: 69%

See 1 more Smart Citation

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

show abstract

Section: The Hydrogen Passivation Of Carbonmentioning

confidence: 69%

“…The first observations of dopant passivation during OMVPE involved acceptors in lnP [67,68].' More recently, hydrogen passivation has been reported in A1GaInP:Zn and GaAs-based compounds doped with carbon.…”

Section: The Hydrogen Passivation Of Carbonmentioning

confidence: 99%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…During epitaxial growth of III-V materials by gas phase techniques like metalorganic chemical vapor deposition (MOCVD) and metalorganic molecular beam epitaxy (MOMBE), hydrogen can be introduced from the source gases [80][81][82][83][84][85][86]. Zn-doped InP grown by MOCVD with an InAsP capping layer is cooled down in an AsH3 ambient; the Zn is passivated by hydrogen which is introduced by the pyrolysis of AsH3 at the surface [80,81].…”

Section: Unintentional Dopant Passivationmentioning

confidence: 99%

“…Zn-doped InP grown by MOCVD with an InAsP capping layer is cooled down in an AsH3 ambient; the Zn is passivated by hydrogen which is introduced by the pyrolysis of AsH3 at the surface [80,81]. For epitaxial lavers of GaAs:C and related alloys grown from metalorganic sources, an appreciable fraction of the C has been found to be passivated by hydrogen introduced from the source gases [80][81][82][83][84][85][86]. Figure 8 shows infrared absorption spectra of C-H complexes in GaAs:C grown by metalorganic MBE.…”

Section: Unintentional Dopant Passivationmentioning

confidence: 99%

Hydrogen Passivation in Semiconductors

Stavola

1992

Acta Phys. Pol. A

View full text Add to dashboard Cite

“…Postgrowth cooling occurred in a PH 3 /H 2 environment only to minimize acceptor passivation. 7 Fabrication of CMBH lasers involves three growth steps: growth of the base epitaxial layers followed by mesa delineation and blocking layer growth and finally growth of cladding and contact layers ͑third growth͒. From the substrate, the base epitaxial layer structure consisted of a Si-doped InP buffer layer, a 0.13 m Si-doped InGaAsP bulk active layer, a Sidoped InGaAsP waveguide layer, a 0.6 m Zn-doped or undoped InP cladding layer, and a sacrificial InGaAsP cap layer.…”

mentioning

confidence: 99%

1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth

Swaminathan¹,

Reynolds²,

Geva³

1998

Journal of Applied Physics

View full text Add to dashboard Cite

A study of Zn diffusion behavior in capped mesa buried heterostructure lasers reveals the Zn profile in the base epitaxial region of InGaAsP/InP heterostructures to be dominated by diffusion during regrowth. This diffusion behavior has enabled us to fabricate a laser without any Zn doping in the p clad during base growth. The lasing characteristics at 25 °C are comparable to those of normally Zn-doped structures. The Zn diffusion into the undoped cladding layer, and thus, the temperature performance of these lasers are dependent on the level of Zn doping in third growth.

show abstract

Effect of cooling ambient on electrical activation of dopants in MOVPE of InP

Cited by 49 publications

References 3 publications

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Hydrogen Passivation in Semiconductors

1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth

Contact Info

Product

Resources

About