Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarization

Rosales-Yeomans, D.; Lee, H.; Suzuki, Tohru; Philipossian, Ara

doi:10.1016/j.tsf.2011.08.029

Cited by 17 publications

(8 citation statements)

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“…2(a)] [23,24]. They also studied the dependence of the slurry film thickness on the type of conditioner disk (design, kinematics, and pressure) [26] and pad properties (asperities, roughness, and groove) [25]. They measured the in situ coefficient of friction (COF) along with slurry film thickness.…”

Section: Lubrication Modelsmentioning

confidence: 99%

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo

2021

Journal of Materials Research

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As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

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Section: Lubrication Modelsmentioning

confidence: 99%

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo

2021

Journal of Materials Research

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“…The behavior of the slurry and abrasive at the contact interface is affected by the groove, viscosity, flow rate of the slurry, and abrasive size [18]. Among these, the platen groove is closely related to the lapping characteristics because it greatly influences the slurry flow and the distribution of abrasives [19]. Therefore, a theoretical approach to the material removal mechanism is required to explain the correlation between the groove and lapping characteristics; accordingly, a material removal model was developed using indentation theory to analyze the correlation between groove density and material removal rate.…”

Section: Materials Removal Model According To Indentation Theorymentioning

confidence: 99%

Material Removal Model for Lapping Process Based on Spiral Groove Density

et al. 2021

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The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness variation and material removal rate during lapping to ensure price competitiveness of wafers; consequently, the lapping process has gained the attention of researchers. However, there is insufficient research on the effect of platen grooves on the lapping process. In this study, the parameters to describe grooves were defined in order to understand their influence on the lapping process, and a material removal model was suggested based on indentation theory and subsequently experimentally validated. The results indicate that changes in groove density affect the lubrication condition at the contact interface as well as the probability of abrasive participation by varying the oil film thickness. When fabricating the groove for a lapping platen, a groove density at the critical groove density (CGD) or higher should be selected. The higher the groove density, the easier it is to avoid the CGD, and the higher is the material removal rate. The results of this study will enable engineers to design lapping platen grooves that are suitable for the production of modern semiconductor wafers.

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“…Orthogonal experimentation is a high-efficiency, fast, and economical experimental design method, which can analyze the experimental results through fewer experiments and obtain better process parameters [29][30][31]. In order to obtain high-efficiency and high-quality silicon wafer polishing, surface roughness (Ra) and material removal rate (MRR) are usually selected as evaluation indicators.…”

Section: Experimental Designmentioning

confidence: 99%

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

et al. 2020

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Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.

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Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarization

Cited by 17 publications

References 1 publication

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Material Removal Model for Lapping Process Based on Spiral Groove Density

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

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