Effect of compressive and tensile strain on the performance of 808-nm QW high power laser diodes

Levy, Moshe; Berk, Yuri; Karni, Yoram

doi:10.1117/12.645815

Cited by 11 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So, almost equal EL intensities for the TM and TE modes go along with data published previously. 15,41,43 It should also be noted that the TM/TE intensity ratio in real laser operation is strongly determined by cavity parameters, so that the laser emission mode can be switched from one mode to the other by choosing another cavity length. 15 Moreover, in some papers, the TE mode advantage in the propagation along waveguide layers was underlined, so that the TM mode should have a much larger gain to be shown in emission spectra, 15,42 i.e., the performed calculations of the optical gain for the TM and TE modes mainly reflect the optical transition probability in the structure and, at the same time, demonstrate the opportunity of polarization mode tuning under uniaxial compression.…”

Section: Valence Band States Mixingmentioning

confidence: 99%

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

Богданов

Minina

Tomm

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodesThe effects of uniaxial compression in [110] direction on energy-band structures, heavy and light hole mixing, optical matrix elements, and gain in laser diodes with "light hole up" configuration of valence band levels in GaAsP quantum wells with different widths and phosphorus contents are numerically calculated. The development of light and heavy hole mixing caused by symmetry lowering and converging behavior of light and heavy hole levels in such quantum wells under uniaxial compression is displayed. The light or heavy hole nature of each level is established for all considered values of uniaxial stress. The results of optical gain calculations for TM and TE polarization modes show that uniaxial compression leads to a significant increase of the TE mode and a minor decrease of the TM mode. Electroluminescence experiments were performed under uniaxial compression up to 5 kbar at 77 K on a model laser diode structure (pÀAl x Ga 1Àx As= GaAs 1Ày P y =nÀAl x Ga 1Àx As) with y ¼ 0.16 and a quantum well width of 14 nm. They reveal a maximum blue shift of 27 meV of the electroluminescence spectra that is well described by the calculated change of the optical gap and the increase of the intensity being referred to a TE mode enhancement. Numerical calculations and electroluminescence data indicate that uniaxial compression may be used for a moderate wavelength and TM/TE intensity ratio tuning. V C 2012 American Institute of Physics. [http://dx.

show abstract

Section: Valence Band States Mixingmentioning

confidence: 99%

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

Богданов

Minina

Tomm

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…QCW bars at 808 nm are manufactured using Al-free epitaxial material (reference [1]) which was demonstrated to give better electrical to optical performances, thermal stability and absence of catastrophic optical damage for current loads up to 25 times the threshold current.. The cavity length of QCW 808nm bars varies from 0.6 mm to 1.0 mm (see Table 1 in sec.2.2) depending on the typically required driving electrical current.…”

Section: Laser Barmentioning

confidence: 99%

“…All other lifetime tests were performed using the next generation of Al free technology (described and reported in Ref. [1]). Test #3 was performed with current loads of 75A to 105A, in increments of 10A after each 0.1 billion shots.…”

Section: Qcw480 Ldas Tests ## 1and3mentioning

confidence: 99%

High-power laser diodes at SCD: performance and reliability for defence and space applications

Risemberg

Karni

Klumel

et al. 2009

Laser Technology for Defense and Security V

Self Cite

View full text Add to dashboard Cite

High Power Laser Diode Arrays developed and produced at SCD-SemiConductor Devices support a number of advanced defence and space programs. High efficiency and unsurpassed reliability at high operating temperatures are mandatory features for those applications. We report lifetime results of high power bar stacks, operating in QCW mode that rely on a field-proven design comprising Al-free wafer material technology and hard soldering robust packaging. A variety of packaging platforms have been implemented and tested at very harsh environmental conditions. Results include a long operational lifetime study totaling 20 billion pulses monitored in the course of several years for 808 nm QCW bar stacks.. Additionally, we report results of demanding lifetime tests for space qualification performed on these stacks at different levels of current load in a unique combination with operational temperature cycles in the range of -10 ÷60 °C. Novel solutions for highly reliable water cooled devices designed for operation in long pulses at different levels of PRF, are also discussed. The cooling efficiency of microchannel coolers is preserved while reliability is improved.

show abstract

“…However, generating emission at wavelengths above 1100 nm is challenging due to the increased strain in InGaAs QWs with increasing In composition. While a certain amount of compressive strain per QW is favourable for increasing the differential gain [100,101], VECSELs require a relatively large amount of QWs (typically 10 or more) so that the accumulated strain from individual QWs can lead to the formation of misfit dislocations, which reduces their efficiency and lifetime. The net strain arising from the need to use multiple QWs can be reduced by strain compensation, i.e.…”

Section: Gain Mirror Technologymentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

195

View full text Add to dashboard Cite

Effect of compressive and tensile strain on the performance of 808-nm QW high power laser diodes

Cited by 11 publications

References 0 publications

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

High-power laser diodes at SCD: performance and reliability for defence and space applications

Optically pumped VECSELs: review of technology and progress

Contact Info

Product

Resources

About