Effect of composition on high efficiency CZTSSe devices fabricated using co-sputtering of compound targets

Chawla, Vardaan; Clemens, Bruce M.

doi:10.1109/pvsc.2012.6318212

Cited by 38 publications

(27 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In addition, the non-ideal band alignment for devices with increasing S/(S þ Se) should also be [48]. The fact that the efficiency decreases when S/(S þSe) increases seems to be inconsistent with those reported by Chawla et al In their work, S/(S þSe) ratio does not have a significant impact on the efficiency of CZTSSe devices in the range of 0.43-0.79 [49]. However, when taking a careful examination of Fig.…”

Section: Influence Of the Ar Pressure And S/(s þ Se) Ratios On The Prmentioning

confidence: 71%

Formation and impact of secondary phases in Cu-poor Zn-rich Cu2ZnSn(S1−Se )4 (0≤y≤1) based solar cells

Xie

Dimitrievska

Fontané

et al. 2015

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Section: Influence Of the Ar Pressure And S/(s þ Se) Ratios On The Prmentioning

confidence: 71%

Formation and impact of secondary phases in Cu-poor Zn-rich Cu2ZnSn(S1−Se )4 (0≤y≤1) based solar cells

Xie

Dimitrievska

Fontané

et al. 2015

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

“…While silicon-based devices currently constitute approximately 85 For the above reasons, there is strong motivation to find alternatives to the two leading thinfilm chalcogenide absorbers that use low-cost, broadly available elements. Suitable examples of absorbers that use Earth-abundant metals include SnS [19,20], FeS 2 (pyrite) [21], Cu 2 S [22, 23] and Cu 2 ZnSn(S,Se) 4 (CZTSSe) [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Mitzi

Gunawan

Todorov

et al. 2013

Phil. Trans. R. Soc. A.

175

131

View full text Add to dashboard Cite

While cadmium telluride and copper-indiumgallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

show abstract

“…The highest efficiency for non vacuum process was achieved by desolving CZTS na− noparticles in hydrazine by a spin coater annealed in sulphur atmosphere at 540°C for the vacuum based method. The highest efficiency for CZTS is 9.3% achieved by co−sputter− ing of ZnS and SnS targets [36,37].…”

Section: Czts Nanostructuresmentioning

confidence: 99%

Advances in CZTS thin films and nanostructured

Ali

Ahmed

Bakhtiar-Ul-Haq

et al. 2015

Opto-Electronics Review

View full text Add to dashboard Cite

Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

show abstract

Effect of composition on high efficiency CZTSSe devices fabricated using co-sputtering of compound targets

Cited by 38 publications

References 6 publications

Formation and impact of secondary phases in Cu-poor Zn-rich Cu2ZnSn(S1−Se )4 (0≤y≤1) based solar cells

Formation and impact of secondary phases in Cu-poor Zn-rich Cu2ZnSn(S1−Se )4 (0≤y≤1) based solar cells

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Advances in CZTS thin films and nanostructured

Contact Info

Product

Resources

About