Advances in CZTS thin films and nanostructured

Ali, Nisar; Ahmed, Rashid; Bakhtiar-Ul-Haq,; Shaari, A.

doi:10.1515/oere-2015-0022

Cited by 4 publications

(3 citation statements)

References 54 publications

(26 reference statements)

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“…Advances in solar photovoltaic (PV) power generation are critical to addressing global energy needs [1,2]. The optimization of different parameters, especially: the band gap Eg, dimensions,….etc of the solar cell material for best values are parameterized in research and compared at different time [3]. Improving the power output by further optimizing device performance may be contributed to the reduction of production cost of solar cells [4].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor

Ouledali

Amrani

Daoud

et al. 2022

Annals of West University of Timisoara - Physics

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The structural, electronic, and optical properties of ZnSnP2 compound were determined using the first principles calculations. We applied the full-potential enhanced plane wave method (FP-LAPW) within the framework of density functional theory (DFT) as implemented in the Wien2k package. The exchangecorrelation potential term was treated using the local density approximation (LDA), the generalized gradient approximation (GGA), the Engel–Vosko generalized gradient approximation (EV–GGA) and GGA plus modified Becke– Johnson (mBJ). The lattice parameters of the ZnSnP2 obtained by minimizing the total energy are consistent well with the existing theoretical and experimental results. The Dugdale and MacDonald Grüneisen parameter was found to be 1.43 from the GGA and 1.44 from the LDA, respectively. According to the electronic properties, the band structure analysis of ZnSnP2 shows that it has a direct band gap in the (Γ-Γ) direction with a value of 1.43 eV. We have investigated the optical properties of ZnSnP2 semiconducting compound. The data of the dielectric functions shown that the peaks are positioned at around 2.41, 3.21, 3.83 and 4.09 eV, respectively.

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Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor

Ouledali

Amrani

Daoud

et al. 2022

Annals of West University of Timisoara - Physics

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“…[4,10] Selenium has the ability to enhance the conduction and valance band alignment in the compound which is a very basic parameter for exciton absorption. [11] It has also been reported that the variation in the bandgap occurs with the variation in the ratio of [S]/([S] + [Se] in CZTSSe. [12] Therefore, a proper ratio of [S]/([S] + [Se] is required for the most favorable bandgap of the absorber layer for device fabrication.…”

Section: Introductionmentioning

confidence: 99%

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

Ali

Zubair

Khesro

et al. 2021

Crystal Research and Technology

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Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450°C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe exhibit polycrystalline nature with an average crystallite size of 46.3 nm in tetragonal structure. To determine the bandgap energy, as well as optical properties, the visible spectrophotometer, and four-probe techniques, are used. From the measurements, the bandgap energy of the annealed film is found to be 1.64 eV at 450°C which is in the optimal range as an absorber layer for solar cell devices. Similarly, by employing the four-probe technique, I-V characteristics for the as-deposited thin films, the material shows non-ohmic behavior whereas the annealed film demonstrates partially ohmic with a resistance of 670 ohms.

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“…CZTS material is a p-type semiconductor and with direct band gap of around 1.5 eV which is an ideal value for absorber layer [1,2]. Besides, CZTS material composes of four elements: copper, zinc, tin and sulfur, which are all non-toxic elements and available abundantly in the earth's crust, so CZTS can help to reduce cost of solar cells in the market.…”

Section: Introduction mentioning

confidence: 99%

Effect of temperature on Cu2ZnSnS4 nanomaterial synthesized by hydrothermal approach

Viet

2018

MaP

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Cu2ZnSnS4 (CZTS) is a p-type semiconductor with high absorption coefficient and direct bandgap from 1 to 1.5 eV, which is ideal for making absorber layer for solar cell. However, it is difficult to get single phase of CZTS due to the competitive formation of binary and ternary secondary phases. In this paper, we prepared CZTS nanoparticles by hydrothermal method and investigate the influence of hydrothermal temperature on the product. Raman scattering, X-ray diffraction, scanning electron microcopy, energy dispersive X-ray spectroscopy and diffusion reflective measurement were applied to characterize the products. The products are high quality nanocrystals of kesterite phase with uniform size which is applicable for solar absorber layer fabrication.

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Advances in CZTS thin films and nanostructured

Cited by 4 publications

References 54 publications

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

Effect of temperature on Cu2ZnSnS4 nanomaterial synthesized by hydrothermal approach

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Advances in CZTS thin films and nanostructured

Cited by 4 publications

References 54 publications

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP2 Semiconductor

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP2 Semiconductor

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

Effect of temperature on Cu2ZnSnS4 nanomaterial synthesized by hydrothermal approach

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Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor

Theoretical Investigation of Structural, Electronic, and Optical Properties of ZnSnP₂ Semiconductor