Effect of chemical reaction stoichiometry on the pressure variations in the etching chamber during etching of aluminium

Martišovitš, V.; Záhoran, M.; Košinár, I.; Trnovec, J.

doi:10.1016/0375-9601(93)90157-u

Cited by 2 publications

(3 citation statements)

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“…Such a measurement can be also used to determine an unknown stoichiometric coefficient of the etching reactions. In our experiments evidence was obtained that equation (7) is the dominant reaction for chemical etching of aluminium by chlorine at 45 • C [21]. The instantaneous etching rate can be obtained from the measured flux difference, too.…”

Section: Applicationsmentioning

confidence: 60%

“…Due to the change in the particle flow through the chamber caused by etching a decrease of the pressure in the chamber can be observed. This pressure variation can be applied to the end point detection [21] as illustrated in figure 27. The change in the particle flow is caused by a difference between the flux of the reactant reaching the surface and the flux of the etching products released from the surface.…”

Section: Applicationsmentioning

confidence: 99%

“…The flux I (t) can be determined from the pressure drop by using the pumping characteristics of the vacuum system (i.e. the dependence of the gas mixture pressure in the etching chamber on the gas flow rate) [21].…”

Section: In Situ Monitoring Of the Etching Rate Uniformitymentioning

confidence: 99%

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Transport of chemically active species in plasma reactors for etching

Martišovitš

Záhoran

1997

Plasma Sources Sci. Technol.

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The one-dimensional transport of the neutral reactive species in the planar reactor is studied theoretically to draw conclusions on the reactor performance at maximum etching rate. The etching rate is calculated as a function of the reactant flux entering the reactor for various flux densities of desorbing product from the etched surface. An influence of the mutual diffusion of reactant and product on the etching rate is shown together with respective concentrations of reactant and reaction product in the reactor. The theory is compared with experimental results corresponding to etching of aluminium by chlorine. A method of in situ monitoring of the etching rate uniformity is also presented.

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Section: Applicationsmentioning

confidence: 60%

Section: Applicationsmentioning

confidence: 99%