Effect of cerium addition on the microstructure, electrical and relaxor behavior of Sr0.5Ba0.5Nb2O6 ceramics

Velayutham, Thamil Selvi; Salim, N.I.F.; Gan, Wee Chen; Majid, W.H. Abd.

doi:10.1016/j.jallcom.2015.12.248

Cited by 24 publications

(14 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When doping concentration increases, the replacement of smaller ionic radius Gd 3+ will cause the c‐lattice constant contract, as shown in Figure where the SBN (002) peaks shifted to larger 2 θ values as the Gd doping concentration increased. Similar shifting in diffraction peaks properties had also been reported in cerium‐doped SBN ceramics …”

Section: Resultssupporting

confidence: 83%

See 1 more Smart Citation

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Lam

Chan

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Gd-doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of þP r ¼ 1.36 μC cm À2 and ÀP r ¼ À5.73 μC cm À2 and coercive field of þE c ¼ 158.0 kV and ÀE c ¼ À30.8 kV are obtained.

show abstract

Section: Resultssupporting

confidence: 83%

“…The TTB structure of SBN provides a great variability for structural modification. For example by doping rare‐earth elements to replace the A1 and A2 site cations or adding small size cations such as sodium and potassium into the interstitial C‐site …”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Lam

Chan

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Overall, all three lattice parameters show higher values for tin-doped samples compared to sample without tin. The occupancy of tin (Sn 2+ ) is critically investigated on various available sites in SSBLN structure based on ionic radius and coordination number as listed in Table- increase in c-axis strain (c/a) [10]. The same is observed through the values of c-axis strain as indicated in Table-1.…”

Section: Fig 1 Xrd Patterns Of Tin-doped Ssbln Ceramics Microwave Smentioning

confidence: 98%

Hole/electron transport layers in tin-doped SBLN nano materials for hybrid solar cell applications

Pritam

Shrivastava

2019

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

In this work, layered perovskite SBN was investigated in a new doped form for hole as well as electron transport layer (HTL/ETL) in perovskite solar cells. This work was targeted to conclude the effect of tin doping in lanthanum-bismuth layer SBN on optical energy band gap besides dominant electron-hole transportation to assist in perovskite solar cell applications. Thoroughly hard ball-milled compositions 0.01, 0.03, 0.05, 0.1 and 0.2) were prepared by special microwave synthesis to obtain fine (~10-60nm) mesoporous particle network of atomic level substitutions. Microwave synthesis was crucial in modifying dielectric, semiconducting and optical characteristics of prepared SBN materials. The band gap reduced in continuous manner and carrier mobility was increased by 112% for maximum tin doping. Nano particle formation assisted in raising carrier mobility by bridging bigger grains through nano particles. The effect of macro-sized grains and nano-sized grain boundaries on carrier transport were further investigated in detail using impedance spectroscopy.

show abstract

“…1-3 TB niobate oxides with general formula of (A1) 4 (A2) 2 (C) 4 Nb 10 O 30 are based on ab-planar array of corner-shared NbO 6 octahedrons that are stacked along the c-axis to form different tunnels with pentagonal (A1), quadrangular (A2), and triangular (C) cross-sections in the crystal lattice. [5][6][7][8][9][10][11] In addition, niobate materials with the 'filled' TB structure usually exhibit much better dielectric and ferroelectric properties compared to those with the 'unfilled' TB structure. 4 It is reported that the distortion of NbO 6 octahedral polar unit can be greatly affected by the ion-occupying-situation, ionic size, and electronegativity of substituted ions, resulting in some special dielectric and ferroelectric behaviors in TB niobate materials.…”

Section: Introductionmentioning

confidence: 99%

“…4 It is reported that the distortion of NbO 6 octahedral polar unit can be greatly affected by the ion-occupying-situation, ionic size, and electronegativity of substituted ions, resulting in some special dielectric and ferroelectric behaviors in TB niobate materials. [5][6][7][8][9][10][11] In addition, niobate materials with the 'filled' TB structure usually exhibit much better dielectric and ferroelectric properties compared to those with the 'unfilled' TB structure. 5,8,12 In the past decades, luminescent-ferroelectic materials have aroused considerable attention as that they can be developed for future multifunctional optoelectronic devices within a single material.…”

Section: Introductionmentioning

confidence: 99%

Enhanced electrical properties and strong red light‐emitting in Eu³⁺‐doped Sr_1.90Ca_0.15Na_0.9Nb₅O₁₅ ceramics

Hao

Yang

et al. 2017

J Am Ceram Soc

View full text Add to dashboard Cite

The luminescent‐ferroelectic materials based on Sr1.90Ca0.15Na0.9Nb5O15 (SCNN) matrix doping with Eu3+ were synthesized by the conventional solid‐state reaction method. The crystal structure, photoluminescence, thermal stability, dielectric, ferroelectric, and piezoelectric behaviors were systematically investigated. XRD results revealed that Eu3+ introduction could induce the tungsten bronze phase transition from orthorhombic to tetragonal structures. The dielectric spectra of all specimens showed two broad dielectric anomalies: a high‐temperature ferroelectric phase transition (Tc) and a low‐temperature ferroelastic phase transition (Ts), both of which were suppressed at higher Eu3+ concentrations. The enhanced electrical properties were obtained in a proper Eu3+ concentration range of 0.03‐0.05. For all SCNN:xEu3+ samples, the strong red emission peak at 617 nm originating from the electric dipole transition of 5D0 →7F2 was excited by different light excitations of 395 or 463 nm. Our results demonstrated that Eu3+‐doped SCNN materials might have promising potential in advanced multifunctional optoelectronic applications.

show abstract

Effect of cerium addition on the microstructure, electrical and relaxor behavior of Sr0.5Ba0.5Nb2O6 ceramics

Cited by 24 publications

References 26 publications

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Hole/electron transport layers in tin-doped SBLN nano materials for hybrid solar cell applications

Enhanced electrical properties and strong red light‐emitting in Eu³⁺‐doped Sr_1.90Ca_0.15Na_0.9Nb₅O₁₅ ceramics

Contact Info

Product

Resources

About

Effect of cerium addition on the microstructure, electrical and relaxor behavior of Sr0.5Ba0.5Nb2O6 ceramics

Cited by 24 publications

References 26 publications

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Hole/electron transport layers in tin-doped SBLN nano materials for hybrid solar cell applications

Enhanced electrical properties and strong red light‐emitting in Eu3+‐doped Sr1.90Ca0.15Na0.9Nb5O15 ceramics

Contact Info

Product

Resources

About

Enhanced electrical properties and strong red light‐emitting in Eu³⁺‐doped Sr_1.90Ca_0.15Na_0.9Nb₅O₁₅ ceramics