Effect of CeO2 Doping on Phase Structure and Microstructure of AlCoCuFeMnNi Alloy Coating

Ma, Minglin; Wang, Zhixin; Zhou, Jun; Liang, Chong; Zhang, Deliang; Zhu, Daoben

doi:10.1590/1980-5373-mr-2018-0327

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…In ref. [107] the AlCoCuFeMnNi HEA and composite AlCoCuFeMnNi HEA reinforced by the CeO 2 particles were deposited via plasma cladding on carbon steel substrates. The coatings contained two bcc phases.…”

Section: Gb Wetting In the Reinforced Hea Coatingsmentioning

confidence: 99%

High Entropy Alloys for Energy Conversion and Storage: A Review of Grain Boundary Wetting Phenomena

et al. 2022

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The multicomponent alloys with nearly equal concentration of components, also known as high entropy alloys (HEAs), were first proposed 22 years ago. The HEAs quickly became very important in materials science due to their unique properties. Nowadays, the HEAs are frequently used in energy conversion and storage applications. HEAs can consist of five, six or more components. Plasma cladding permits coating of the large surfaces of cheap substrates with (often expensive) HEAs and to enlarge, in such a way, their application area. The large-area coatings deposited by plasma cladding possess multiple advantages such as low thermal distortion, very high energy density, as well as low dilution of the substrate material. Plasma cladding ensures good metallurgical bonding between coating and substrate. The costs of operation and equipment are also very attractive. During plasma cladding, the mixed powders are blown by carrier gas into a plasma torch or are positioned on a substrate. This powder mixture is then melted in or under the plasma torch. The plasma torch, in turn, sequentially scans the substrate. After finalizing the crystallization process, the solid polycrystal appears which contains few residual melts. This remaining melt can completely or incompletely wet the grain boundaries (GBs) in solid phase of the polycrystal. These completely or incompletely wetted GBs can strongly influence the microstructure of HEA coatings and their morphology. In this review we analyze the GB wetting HEAs containing one phase in HEAs with two, three and more phases, as well as in HEAs reinforced with particles of carbides, nitrides, borides, or oxides. We also analyze the microstructure of the rather thick coatings after plasma cladding after additional laser remelting and observe how GB wetting changes over their thickness.

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Section: Gb Wetting In the Reinforced Hea Coatingsmentioning

confidence: 99%

High Entropy Alloys for Energy Conversion and Storage: A Review of Grain Boundary Wetting Phenomena

et al. 2022

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The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

Rüzgar

2020

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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The heterojunction photodiodes with undoped ZnO and Indium (In) doping ZnO thin films have been grown on p type silicon wafer by solution based spin coating method. The crystal structure analyzes of the films show that they have amorphous nature. The electrical characterizations of diodes have been performed by classical I-V and C-G-V technique. The minimum ideality factor of 3.97 and minimum series resistance of 7.2 kΩ have been recorded from 5% In doping ZnO/p-Si diode. The phototransient measurements show that photodiodes react fast to visible light and have a good reproducibility switching cycle. Similarly, the highest photosensitivity of 3.15×10 3 and responsivity of 2.02 A/W have been obtained from 5% In doping ZnO/p-Si photodiode. This study indicates that the doping of In improves the electrical and optoelectrical performance of ZnO based photodiodes.

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Effect of CeO2 Doping on Phase Structure and Microstructure of AlCoCuFeMnNi Alloy Coating

Cited by 2 publications

References 18 publications

High Entropy Alloys for Energy Conversion and Storage: A Review of Grain Boundary Wetting Phenomena

High Entropy Alloys for Energy Conversion and Storage: A Review of Grain Boundary Wetting Phenomena

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

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