Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition

Wan, Lei; Bai, Zhiyong; Hou, Zerong; Wang, DeLiang; Sun, Hao; Xiong, Limin

doi:10.1016/j.tsf.2010.07.011

Cited by 56 publications

(45 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(b). 22 It can be seen that the nano-crystalline size was decreased from 31.5 nm for the undoped CdS to a value of 27.4 nm for the 5% Cu doped CdS film. After the CdCl 2 -annealing, the characteristics hexagonal H(103) peak was observed for all the samples, see Fig.…”

Section: Resultsmentioning

confidence: 92%

See 1 more Smart Citation

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

Self Cite

View full text Add to dashboard Cite

Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

show abstract

Section: Resultsmentioning

confidence: 92%

“…22,31 For the three CdS samples doped with different Cu doping concentrations, after the CdCl 2 -annealing, see Fig. 6(b), the V Cd -related defect emission intensity for the 0.1%-Cu-doped sample was much larger than that of the 0.3% and 0.5%-Cu-doped samples.…”

Section: Resultsmentioning

confidence: 94%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

Self Cite

View full text Add to dashboard Cite

show abstract

“…Oxides (CdO and CdSO 4 ) formed when a CdS film was heat treated without a CdCl 2 precoating in air. The detailed formation mechanism of the oxides and the CdS grain coalescence process was discussed in details in our previous work [9]. The presence of oxides in a CdS film heat treated without CdCl 2 in air prevented the clusters to be coalesced at high temperatures.…”

Section: Resultsmentioning

confidence: 98%

“…These oxides will also affect the performance of a CdTe/CdS solar cell. The presence of CdCl 2 on the surface of a CdS film protected it from oxidation during annealing in air and promoted formation of Cl S and V Cd point defects in CdS [9]. The anti-oxidation was attributed to the incorporation of a significant amount of Cl into CdS to form the Cl S , which prevented the oxygen in-diffusion and chemical bonding during the annealing.…”

Section: Resultsmentioning

confidence: 99%

Effect of CdCl₂ annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

Bai

Wan

Hou

et al. 2010

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

In order to study the effect of CdCl2 annealing treatment on thin CdS films and CdTe/CdS thin film solar cells, a comparative study was carried out on three types of CdTe/CdS solar cells, which had different kinds of CdS window layer: as‐deposited CdS, air‐annealed CdS without CdCl2 pre‐coating, and CdCl2‐annealed CdS. When annealed in air the CdS film was partially oxidated to CdO and CdSO4. These oxides increased the series resistance of the CdTe solar cell and led to the lowest fill factor. The presence of CdCl2 on the surface of a CdS thin film during heat treatment in air protected it from oxidation and promoted the recrystallization of the CdS film, resulting in large and closely packed grains with a grain size of ∼ 50 ‐150 nm. CdTe/CdS solar cell with such a kind of CdS window layer showed the largest short circuit current and highest conversion efficiency of 12.4%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…The green band emission observed at 2.28 eV has been originated from the transition of the increased V s donors to recombine with S interstitials (I s ) acceptors in the valence band [25]. The yellow band emission observed at 2.04 eV is caused by a donor-acceptor pair [26]. Ahmad-Bitar [27] reported a similar band for CdS thin films which they attributed to recombination via surface localized states, a transition from cadmium interstitial (I Cd ) to valence band, and the transition from interstitial cadmium-cadmium vacancy complex I + Cd −V − Cd which acts as a donor to an acceptor level.…”

Section: Pl Studiesmentioning

confidence: 99%

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Gnanamuthu¹,

Punithavathy²,

Jeyakumar³

et al. 2018

Acta Phys. Pol. A

View full text Add to dashboard Cite

This paper reports the synthesis, crystal structure, surface morphology, optical and electrical properties of Mgdoped Sn2S3 thin films deposited by spray pyrolysis technique. All the films exhibit orthorhombic crystal structure with a (211) preferential orientation. Crystallite size calculations based on the Debye-Scherrer formula indicated that the Sn2S3 crystallite size increases with Mg content from 27.97 nm to 33.58 nm. Scanning electron microscopy images showed that all the films were very smooth composed of nanoneedle and nanoplate shaped grains. The band gap energy of the films exhibits a blue shift from 1.94 eV to 2.09 eV with increase in Mg concentration. Resistivity values of the undoped and Mg-doped Sn2S3 films were found to be in the order of 0.1 Ωcm. From the obtained results it is observed that the Sn2S3 film coated with 2 wt% Mg concentration exhibits better physical properties.

show abstract

Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition

Cited by 56 publications

References 38 publications

Cu-doped CdS and its application in CdTe thin film solar cell

Cu-doped CdS and its application in CdTe thin film solar cell

Effect of CdCl₂ annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Contact Info

Product

Resources

About

Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition

Cited by 56 publications

References 38 publications

Cu-doped CdS and its application in CdTe thin film solar cell

Cu-doped CdS and its application in CdTe thin film solar cell

Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

Contact Info

Product

Resources

About

Effect of CdCl₂ annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications