2011
DOI: 10.1016/j.jallcom.2011.01.184
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Effect of Ca-doping on the structural and electrical properties of CuY1−xCaxO2 (0≤x≤0.10) ceramics

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Cited by 10 publications
(3 citation statements)
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“…As can be seen, the carrier concentration of the CuGa 0.8 Cr 0.2 O 2 film is one magnitude larger than that of the other films, which also indicates that the new energy level induced the increase of the hole in the valence band and contributed to the electrical conductivity. Although there are other reports on the fact that the doping of the divalent element (e.g., Mg, Ca) greatly increases the electrical conductivity of the delafossite compound, 39,40 the CuGa 1Àx Cr x O 2 films in the present work are the undoping system prepared by the sol-gel method. One can think that the present CuGa 1Àx Cr x O 2 films have better physical properties, as compare to those reported up to now.…”
Section: Electrical Transportmentioning
confidence: 88%
“…As can be seen, the carrier concentration of the CuGa 0.8 Cr 0.2 O 2 film is one magnitude larger than that of the other films, which also indicates that the new energy level induced the increase of the hole in the valence band and contributed to the electrical conductivity. Although there are other reports on the fact that the doping of the divalent element (e.g., Mg, Ca) greatly increases the electrical conductivity of the delafossite compound, 39,40 the CuGa 1Àx Cr x O 2 films in the present work are the undoping system prepared by the sol-gel method. One can think that the present CuGa 1Àx Cr x O 2 films have better physical properties, as compare to those reported up to now.…”
Section: Electrical Transportmentioning
confidence: 88%
“…To use TCOs for a range of applications, one must be able to tailor the properties of the host guest matrix material using dopants of various concentrations. Up to now, many examples of the preparation and application of p-type semiconducting thin films using newly developed oxide materials have been reported, such as Ag 2 O-In 2 O 3 [23], CuY 1Àx Ca x O 2 [24,25], CuScO 2 [26,27], CuGa 1Àx Fe x O 2 [28], NiCo 2 O 4 [29] and Cu 2 O-CoO [30]. The most common techniques for the synthesis of p-type multicomponent oxide thin films, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…have attracted widespread interests, and different techniques have been used for the preparation of this kind of TCO thin films [14][15][16][17][18][19][20][21]. The ternary oxide SrCu 2 O 2 has a direct band gap of 3.3 eV in combination with non-toxicity and relatively low deposition temperature [22].…”
Section: Introductionmentioning
confidence: 99%