Effect of buffer layer deposition on diameter and alignment of carbon nanotubes in water-assisted chemical vapor deposition

Patole, Shashikant P.; Jeong, Jae−Hun; Yu, Seong Man; Kim, Hajin; Han, Jae‐Hee; Han, In Taek; Yoo, Ji‐Beom

doi:10.1016/j.apsusc.2012.12.129

Cited by 3 publications

(4 citation statements)

References 32 publications

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“…Lately, the growth of VACNT have been reported on different conducting DBL materials, such as aluminium [4,23,25,46,51,56,[63][64][65][66][67][68][69][70][71][72][73], molybdenum aluminide [34,74], tantalum [62,75,76], tantalum nitride [77,78], titanium [79,80], titanium aluminide [47], titanium nitride [60,[81][82][83][84][85][86][87][88], metal silicide nitride [89][90][91], their stacking use, graphitic layer [92] and many others. Nowadays, researchers are using physical vapor deposition (PVD), atomic layer deposition (ALD) [86,93,94], or CVD techniques for the deposition of various conducting DBL.…”

Section: Dbl Towards Enhanced Growth Of Vacnt On Diverse Flat and 3-d...mentioning

confidence: 99%

“…Therefore, long VACNT are easily achievable on insulating DBLs, yet, the same needs to be developed for conducting ones. Research teams have deeply investigated the use of Al DBL, with different postdeposition treatments, for the growth of VACNT [46,51,[64][65][66][68][69][70][71][72].…”

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

“…No analyses were performed to determine the properties and the potential use of the resulting composites. [68] modified the grain size, i.e., the surface roughness of an Al DBL with the change of the deposition rate instead of the change of substrate temperature during PVD. Thus, the authors have revealed the DBL structure, morphology, and rearrangement (during the annealing and CNT synthesis process) to influence the growth of VACNT with modified CNT properties, such as CNT alignment, height, and diameter (details given in Table 1).…”

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

“…The study generally presented a controllable way to optimize vertical alignment, growth rate, and density of VACNT by adjusting the DBL and catalyst layer thickness. The conductivity of the above-presented DBLs [65,66,68] should be heavily reduced compared to a pure Al film due to the enhanced oxidation of the Al for improved growth of VACNT. However, multiple studies confirm the necessity of a well-balanced compromise between the conductivity of a DBL (metal purity) and the vital presence of an oxide phase to anchor the active catalyst nanoparticles and endure the tunable growth of VACNT.…”

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

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Conducting Interface for Efficient Growth of Vertically Aligned Carbon Nanotubes: Towards Nano-Engineered Carbon Composite

2022

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Vertically aligned carbon nanotubes (VACNT) are manufactured nanomaterials with excellent properties and great potential for numerous applications. Recently, research has intensified toward achieving VACNT synthesis on different planar and non-planar substrates of various natures, mainly dependent on the user-defined application. Indeed, VACNT growth has to be adjusted and optimized according to the substrate nature and shape to reach the requirements for the application envisaged. To date, different substrates have been decorated with VACNT, involving the use of diffusion barrier layers (DBLs) that are often insulating, such as SiO2 or Al2O3. These commonly used DBLs limit the conducting and other vital physico-chemical properties of the final nanomaterial composite. One interesting route to improve the contact resistance of VACNT on a substrate surface and the deficient composite properties is the development of semi-/conducting interlayers. The present review summarizes different methods and techniques for the deposition of suitable conducting interfaces and controlled growth of VACNT on diverse flat and 3-D fibrous substrates. Apart from exhibiting a catalytic efficiency, the DBL can generate a conducting and adhesive interface involving performance enhancements in VACNT composites. The abilities of different conducting interlayers are compared for VACNT growth and subsequent composite properties. A conducting interface is also emphasized for the synthesis of VACNT on carbonaceous substrates in order to produce cost-effective and high-performance nano-engineered carbon composites.

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Section: Dbl Towards Enhanced Growth Of Vacnt On Diverse Flat and 3-d...mentioning

confidence: 99%

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

Section: Via Physical Vapour Deposition (Pvd)mentioning

confidence: 99%

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Conducting Interface for Efficient Growth of Vertically Aligned Carbon Nanotubes: Towards Nano-Engineered Carbon Composite

2022

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The dark-PMT: A novel directional light dark matter detector based on vertically-aligned carbon nanotubes

Pandolfi

Rago

Cavoto

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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The Effect of Buffer Layer on CNT Structure and CNT/Copper Interfacial Properties

et al. 2016

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Carbon nanotubes (CNTs), with exceptional thermal and mechanical properties as well as inherently high surface area, are an attractive candidate for integrating into thermal structures of advanced power electronics. Growth of vertically aligned carbon nanotubes (VACNTs) directly onto copper (Cu) substrates is a promising approach to apply CNTs as novel thermal interface materials (TIMs) in electronics packaging. However, compared to growing CNTs on conventional inert substrates such as SiO2, direct growth of controllable CNT arrays onto Cu substrates is significantly more challenging due to the diffusion of metallic catalyst into the substrate during growth. By depositing an appropriate buffer layer on the Cu substrate surface, VACNTs of good alignment and high quality were reproducibly synthesized on the Cu substrate via the chemical vapor deposition (CVD) method in this study. The effect of different buffer layers on the CNT growth, nanotube structure and quality was investigated (SEM, Raman), particularly in terms of the interfacial properties between the CNT array and Cu substrate (Tensile compression force tester, Laser Flash Analysis). Our experimental results indicated that the buffer layer material, deposition method, and thickness play a key role in regulating the CNT layer growth/structure, leading to variable mechanical and thermal properties. The fundamental understanding thus obtained allows the successful synthesis of VACNT on copper substrates with desired structure and properties.

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Effect of buffer layer deposition on diameter and alignment of carbon nanotubes in water-assisted chemical vapor deposition

Cited by 3 publications

References 32 publications

Conducting Interface for Efficient Growth of Vertically Aligned Carbon Nanotubes: Towards Nano-Engineered Carbon Composite

Conducting Interface for Efficient Growth of Vertically Aligned Carbon Nanotubes: Towards Nano-Engineered Carbon Composite

The dark-PMT: A novel directional light dark matter detector based on vertically-aligned carbon nanotubes

The Effect of Buffer Layer on CNT Structure and CNT/Copper Interfacial Properties

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