Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)
DOI: 10.1109/iitc.2004.1345719
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Effect of bridging groups of precursors on modulus improvement in plasma co-polymerized low-k films

Abstract: We have demonstrated that the mechanical strength of organic silica low-k films can be enhanced by introducing a reinforcement monomer in a matrix monomer under plasma excitation. The modulus improvement mechanism was investigated by analyzing the film structure. Pyrolysis gas chromatography /mass spectrometry (Py-GUMS) revealed incorporation of a reinforcement monomer in the matrix through co-polymerization reactions. Compositional analysis of the films showed that the extent of reinforcement is associated wi… Show more

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Cited by 3 publications
(4 citation statements)
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“…In conclusion, we have designed and synthesized a new amorphous fluoropolymer ( PFN ), which shows a dielectric constant of 2.33 with a dielectric loss less than 1.2 × 10 −3 at 30 MHz. Moreover, the polymer film shows k values below 2.5 in the range from 5 to 30 MHz; such dielectric constants are much lower than those of previously reported polymeric low‐ k materials such as polyimides,1d, 19 SiLK,20 and benzocyclobutene (BCB)‐based polymers 21. In comparison with porous low k materials, PFN shows a higher modulus and bonding strength, which renders it suitable for the application in ULSI circuits.…”
Section: Methodsmentioning
confidence: 79%
See 1 more Smart Citation
“…In conclusion, we have designed and synthesized a new amorphous fluoropolymer ( PFN ), which shows a dielectric constant of 2.33 with a dielectric loss less than 1.2 × 10 −3 at 30 MHz. Moreover, the polymer film shows k values below 2.5 in the range from 5 to 30 MHz; such dielectric constants are much lower than those of previously reported polymeric low‐ k materials such as polyimides,1d, 19 SiLK,20 and benzocyclobutene (BCB)‐based polymers 21. In comparison with porous low k materials, PFN shows a higher modulus and bonding strength, which renders it suitable for the application in ULSI circuits.…”
Section: Methodsmentioning
confidence: 79%
“…Moreover, the polymer fi lm shows k values below 2.5 in the range from 5 to 30 MHz; such dielectric constants are much lower than those of previously reported polymeric low-k materials such as polyimides, [ 1d , 19 ] SiLK, [ 20 ] and benzocyclobutene (BCB)-based polymers. [ 21 ] In comparison with porous low k materials, PFN shows a higher modulus and bonding strength, which renders it suitable for the application in ULSI circuits. …”
Section: Methodsmentioning
confidence: 99%
“…In this review, we have been very selective in our discussions of low- k spin-on organic polymer candidates and have restricted our discussion to those materials that historically presented the best opportunity for success. In addition to those presented as potential spin-on solutions for the k = 2.6−3.2 dielectric range, there were also studies in vapor-deposited polymers: parylenes and polynaphthalenes, , silicon-substituted polyimides, ,− polyquinoxalines, quinolines, ,, norbornenes, , benzocyclobutenes, ,,, carbon-bridged benzocyclobutene hybrids, indanes, , perfluorocyclobutanes, ,, and others, the details of which appear in the literature and in referenced reviews.…”
Section: Materials 33 > K > 27mentioning
confidence: 99%
“…3 The effects of copolymerization of the skeleton monomer and various modification monomers on film properties were investigated for the purposes of deposition acceleration, mechanical reinforcement, and reduction of the dielectric constant. [3][4][5] In this study, we focused on development of organic skeleton monomers for the PCP technology. Properties of the PCP films can be controlled by precursors because most of the original structure of the precursors could be preserved owing to the low plasma energy of the PCP process.…”
mentioning
confidence: 99%