Effect of B₂O₃Additives on Sintering and Microwave Dielectric Behaviors of CuO-Doped ZnNb₂O₆Ceramics

Structure and Microwave Dielectric Properties of Ultralow‐Temperature Cofirable BaV2O6 Ceramics

“…The addition of lowmelting glass or oxides, such as B 2 O 3 , CuO, Bi 2 O 3 , and V 2 O 5 , is commonly used as an effective method to reduce the sintering temperature of dielectric ceramics. [6][7][8][9] However, this approach imparts detrimental effects on the microwave properties of the dielectrics, especially on the quality factor, because of the formation of secondary phases. Thus, the preparation and characterization of new LTCC materials with a high quality factor and a near-zero temperature coefficient of resonant frequency that can be sintered at temperatures Ͻ961°C without glass or oxide additives are essentially required for device fabrication.…”

Effect of sintering parameters on the microstructure and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3–ZnNb2O6 Ceramics

“…Many researchers have shown that sintering of ZnNb 2 O 6 can be done around 900°C by adding low melting point glasses or oxides (e.g. CuO, V 2 O 5 , Bi 2 O 3 , B 2 O 3 ) [10][11][12]. Unfortunately, the Q 9 f value is reduced to *10,000 and the temperature coefficient of resonant frequency is not acceptable.…”

Low-temperature sintering and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics

“…This paper is aimed at lowering the sintering temperature of Ba 2 Ti 3 Nb 4 O 18 ceramics and obtain high microwave dielectric performance using B 2 O 3 (in the form of H 3 BO 3 ) and CuO as sintering aids were aimed. The combinatorial addition of B 2 O 3 and CuO has been used in several other microwave dielectric ceramic system [6,17,18] . Herein the additions of H 3 BO 3 and CuO into Ba 2 Ti 3 Nb 4 O 18 ceramics successfully reduced its sintering temperature from 1 300 to 1 050 °C.…”