Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors

Liu, C.; Zhang, Y. M.; Lv, Hongliang

doi:10.1063/1.4902963

Cited by 14 publications

(8 citation statements)

References 34 publications

(29 reference statements)

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“…We controlled the ALD process circle to manufacture different dielectric thicknesses. A post-deposition annealing (PDA) process was applied to increase the quality of the oxide-semiconductor interface [14][15][16][17]. The process involved heating the film from ambient temperature to 380 • C in N 2 over 15 s, annealing for 60 s , and then cooling to ambient temperature over 300 s [6,7].…”

Section: Methodsmentioning

confidence: 99%

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric

Guan

Jiang

2018

Coatings

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High-k/n-InAlAs MOS capacitors are popular for the isolated gate of InAs/AlSb and InAlAs/InGaAs high-electron mobility transistors. In this study, a new kind of high-k/n-InAlAs MOS-capacitor with a HfO2–Al2O3 laminated dielectric was successfully fabricated using an optimized process. Compared with the traditional HfO2/n-InAlAs MOS capacitor, the new device has a larger equivalent oxide thickness. Two devices, with a HfO2 (8 nm)–Al2O3 (4 nm) laminated dielectric and a HfO2 (4 nm)–Al2O3 (8 nm) laminated dielectric, respectively, were studied in comparison to analyze the effect of the thickness ratios of HfO2 and Al2O3 on the performance of the devices. It was found that the device with a HfO2 (4 nm)–Al2O3 (8 nm) laminated dielectric showed a lower effective density of oxide charges, and an evidently higher conduction band offset, making its leakage current achieve a significantly low value below 10−7 A/cm2 under a bias voltage from −3 to 2 V. It was demonstrated that the HfO2–Al2O3 laminated dielectric with a HfO2 thickness of 4 nm and an Al2O3 thickness of 8 nm improves the performance of the high-k dielectric on InAlAs, which is advantageous for further applications.

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Section: Methodsmentioning

confidence: 99%

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric

Guan

Jiang

2018

Coatings

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“…Pure nitrogen (99.999%) was used as a carrier gas and for purging the reactor after each reagent pulse. The well-known TEMAH+H 2 O precursor system was used (10)(11)(12). TEMAH was delivered into the reactor from the heated source at 100 °C.…”

Section: Experiments Detailsmentioning

confidence: 99%

Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques

2017

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The trap density in hafnia (HfO 2 ) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the H 2 O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO 2 films. The equilibrium value of the trap density in hafnia films was found out.

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“…Meanwhile, in order to suppress the increase of gate leakage current induced by the down-scaling of device dimensions, many high-k materials, e.g. HfO 2 [3], TiO 2 [4], La 2 O 3 [5], etc, have been employed as the gate dielectric of GaAs-based MOS devices. Among these high-k materials, zirconium dioxide (ZrO 2 ) has a high k value (∼24), large bandgap (∼5.8 eV) and sufficient band offsets versus GaAs (∼1.4 eV for the conduction band and ∼3.0 eV for the valence band) [6], therefore good device performance has been achieved by using it as the gate dielectric in GaAs MOS devices [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Liu

Peng

et al. 2019

Semicond. Sci. Technol.

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GaAs MOS capacitors with ZrLaON as the high-k dielectric layer and LaON as the interfacial passivation layer (IPL) are fabricated and the effects of the La content in ZrLaON on the device performance are investigated. Experimental results show that ZrLaON with a moderate or high La content induces serious moisture absorption, thus deteriorating the interfacial and electrical properties of the device, even with the LaON IPL. By adjusting the La content to a suitable value, e.g. a La/(La+Zr) atomic ratio of 13%, good interfacial and electrical properties can be obtained because the passivating role of La on the defects in ZrON can over-compensate the performance degradation induced by the moisture absorption. With the LaON IPL, further improvements in interfacial and electrical properties can be achieved because the LaON IPL can effectively passivate the As-O, Ga-O and As-As bonds at/near the high-k/GaAs interface.

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Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors

Abstract: Articles you may be interested inEffect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

Cited by 14 publications

References 34 publications

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric

Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

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